SPE04M60T-A

SPE04M60T-A JSMC | Alldatasheet

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Technical content

版本 202 A 智能功率模块 (IPM) Intelligent Power Module SPE0 M 0T-A/C 主要参数 MAIN CHARACTERISTICS 用途

APPLICATIONS

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FEATURES

信号高电平有效 Signal high level valid, 兼容 3.3V 和 compatible with 3.3v and 的 MCU MCU 下臂 MOSFET 源极 Lower arm MOSFET source 输出 electrode output 内置自举二极管 Built-in bootstrap diode 内置防直通保护 Built-in straight through protection 内置欠压保护 Built-in undervoltage protection 内部集成温度检 Internal integrated temperature 测输出 detection output 绝缘 耐压 1500V Resistant to high voltage 1500V 订 货 料 号 Order number 产 品 信 息 Product information 无卤 条管 Halogen-Free-Tube 无卤 编带 Halogen-Free- Reel 印 记 Marking 封 装 Package 2A01-05 -16 SPE04M60T-C N/A SPE04M60T-C SOP 23-FP 2A01-05 -16 SPE04M60T-A N/A SPE04M60T-A DIP 23-FP 00V/ A 相全桥驱动 V DSS 00V I D I DM A V ISO 1500V 封装 Package DIP23-FP SOP23-FP PIN1-PIN23 订货信息 ORDER MESSAGE

M 0T-A/C 版本 202 A 模块分布示意图 Module distribution diagram 图 模块内部电路示意图 Fig Internal circuit

M 0T-A/C 版本 202 A 图 模块引 脚 分布示意图 Fig Distribution of pin 引脚编 号 Number 引脚名称 Name 引脚描述

Description

控制电源 GND 端子 IC Common Supply Ground VB(U) U 相上臂驱动电源端子 Bias Voltage for U-Phase High-Side MOSFET Driving VCC(U) U 控制电源端子 Bias Voltage for U-Phase IC and Low-Side MOSFET Driving IN(UH) U 相上臂控制信号输入端子 Signal Input for U-Phase High-Side IN(UL) U 相下臂控制信号输入端子 Signal Input for U-Phase Low-Side NC 无连接 No Connection VB(V) V 相上臂驱动电源端子 Bias Voltage for V-Phase High Side MOSFET Driving VCC(V) V 控制电源端子 Bias Voltage for V-Phase IC and Low Side MOSFET Driving IN(VH) V 相上臂控制信号输入端子 Signal Input for V-Phase High-Side IN(VL) V 相下臂控制信号输入端子 Signal Input for V-Phase Low-Side VTS HVIC 温度输出 Output for HVIC Temperature Sensing VB(W) W 相上臂驱动电源端子 Bias Voltage for W-Phase High-Side MOSFET Driving VCC(W) W 控制电源端子 Bias Voltage for W-Phase IC and Low-Side MOSFET Driving IN(WH) W 相上臂控制信号输入端子 Signal Input for W-Phase High-Side IN(WL) W 相下臂控制信号输入端子 Signal Input for W-Phase Low-Side NC 无连接 No Connection P 逆变器直流输入端子 Positive DC-Link Input U U 相输出端子 Output for U-Phase Bias Voltage Ground for High-Side MOSFET Driving NU U 相下臂 MOSFET 源极端子 Negative DC-Link Input for U-Phase NV V 相下臂 MOSFET 源极端子 Negative DC-Link Input for V-Phase V V 相输出端子 Output for V-Phase Bias Voltage Ground for High-Side MOSFET Driving NW W 相下臂 MOSFET 源极端子 Negative DC-Link Input for W-Phase W W 相输出端子 Output for W Phase Bias Voltage Ground for High-Side MOSFET Driving 图 模块引脚功能定义表 Fig Pin function

M 0T-A/C 版本 202 A 最大额定值 j 除非特殊说明 Absolute Maximum Ratings T j Unless otherwise Specified 逆变部分 Inverter Part 记 号 Symbol 参数 Parameter 条件 Condition 额定值 Ratings 单位 Units V DSS 漏 源电压 Drain-Source Voltage of Each MOSFET V I D 漏极连续电流 Each MOSFET Current, Continuous Tc Tc 测量参考图 Tc=25 Tc refer to Fig: A I DM 漏极电流 峰值 Each MOSFET Pulse Current, Peak Tc 脉冲宽度小于 100us Tc less than 100us A I Drms 漏极电流 有效值 Each MOSFET Current, Rms Tc F PWM 20KHz Arms P D 最大功耗 Maximum Power Dissipation Tc 每个 MOSFET Tc=25 For Each MOSFET W 控制部分 Control Part 记 号 Symbol 参数 Parameter 条件 Condition 额定值 Ratings 单位 Units V CC 控制电源电压 Control Supply Voltage V CC -COM 之间 Applied between VCC and COM V V BS 高侧控制电压 High-side Bias Voltage VB-VS 之间 Applied between VB and VS V V IN 输入信号电压 Input Signal Voltage V IN -COM 之间 Applied between VIN and COM -0.3~V CC +0.3 V 内部自举电路 Bootstrap Diode Part 记 号 Symbol 参数 Parameter 条件 Condition 额定值 Ratings 单位 Units V RRMB 反向耐压 Control Supply Voltage V I FB 正向电流 High-side Bias Voltage T C =25 0.5 A I FPB 正向电流 峰值 Input Signal Voltage T C =25 脉冲宽度小于 m S T C =25 Less than 1mS A 整个系统 Total System 记 号 Symbol 参数 Parameter 条件 Condition 额定值 Ratings 单位 Units T j 结温 Operating Junction Temperature -40~150 T STG 贮存温度 Storage Temperature T C =25 -40~1 V ISO 绝缘耐压 Isolation Voltage 60Hz 正弦 AC 分钟 连接管脚到散热器 60Hz, Sinusoidal,AC min,between pins and heat-sink plate 500 V 备注 为了确保 IPM 正常工作 模块的结温应该小于 150 (@Tc 100 NOTE To insure safe operation of the IPM the average junction temperature should be limited to TJ 150 C (@Tc 100 热阻 Thermal Resistance 记 号 Symbol 参数 Parameter 条件 Condition 额定值 Ratings 单位 Units Rth(j-c) 结到外壳的热阻 Junction to Case Thermal resistance 每个 MOSFET For Each MOSFET 8.0

M 0T-A/C 版本 202 A 电气特性 (Tj 除非特殊说明 Electrical Characteristics (TJ Unless Otherwise Specified) 逆变部分 Inverter Part 记 号 Symbol 参数 Parameter 条件 Condition 最小 值 Min. 典型 值 Typ. 最大 值 Max. 单 位 Unit BV DSS 漏 源击穿电压 Drain-Source Breakdown Voltage V IN =0V I D m A 备注 Note V I DSS 零栅极电压漏极电流 Zero Gate Voltage Drain Current V IN V DS 00V m A V SD 源 漏二极管正向电压 Drain-Source Diode Forward Voltage V CC V BS 15V, V IN 0V, I D 1.0 V R DS on) 漏 源导通电 Drain-Source Turn-On Resistance V CC BS =15V, V IN =5V I D =1A ohm t ON 开关时间 Switching Times V PN =300V V CC BS =15V I D 1.0 A V IN 0/5V 感性负载 (Inductive Load) L =3mH 备注 (Note3) 830 nS t OFF 1030 nS t rr n S E ON u J E OFF u J R BSOA 反向偏置安全工作区 Reverse Bias Safe Operating Area V PN 400V V CC BS =15V I D DP V DS =BV DSS T=150 全直角 Full Square 备注 BV DSS 是单个 MOSFET 漏源最大电压 V PN 应小于该值 考虑到杂散电感 V DS 在任何情况下都不应超过 BV DSS NOTE BV DSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM V PN should be sufficiently less than this value considering the effect of the stray inductance so that V DS should not exceed BV DSS in any case. 备注 t ON 和 t OFF 包含驱动 IC 传输延迟 列表值是在实验条件下测得 不同的 PCB 及连线会改变数值 请参考 图 的开关时间定义 NOTE t ON and t OFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Fig for the switching time definition. 控制部分 Control Part 记 号 Symbol 参数 Parameter 条件 Condition 最小 值 Min. 典型 值 Typ. 最大 值 Max. 单 位 Unit I QCC V CC 静态电流 Quiescent V CC Supply Current V CC 15V V IN V CC COM 之间 Applied between V CC and COM uA I QB V BS 静态电流 Quiescent V BS Supply Current V DB 15V V IN VB(U) U VB(V) V VB(W) W 之间 Applied between VB(U)-U VB(V)-V VB(W)-W 210 uA UV CCD 低侧欠压保护 Low-Side Under-Voltage Protection 检测电平 V CC Under-Voltage Protection Detection Level 9.4 V UV CCR 复位电平 V CC Under-Voltage Protection Reset Level 8.0 9.8 V UV BSD 高侧欠压保护 High-Side Under-Voltage Protection 检测电平 V BS Under-Voltage Protection Detection Level 9.4 V UV BSR 复位电平 V BS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V V TS HVIC 温度检测输出 V CC 15V, T HVIC 图 (Fig5) 0.6 0.8 V

M 0T-A/C 版本 202 A HVIC Temperature Sensing Voltage Output V IH 输入开启阈值电压 ON Threshold Voltage 逻辑高电平 加在 V IN 与 COM 之间 Logic HIGH Level, Applied between V IN and COM 2.9 V V IL 输入关闭阈值电压 OFF Threshold Voltage 逻辑低电平 加在 V IN 与 COM 之间 Logic Low Level, Applied between VIN and COM 0.8 V V F(BSD) 自举二极管导通压降 BSD Forward voltage I F 0.1 TC V 推荐工作条件 Recommended Operating Conditions 记 号 Symbol 参数 Parameter 记号 Symbol 最小 值 Min. 典型 值 Typ. 最大 值 Max. 单 位 Unit V PN 电源电压 Supply Voltage P-N 之间 Applied between P and N 300 400 V V CC 控制电源电压 Control Supply Voltage V CC -COM 之间 Applied between VCC and COM 15.0 16.5 V V BS 高侧控制电源电压 High-Side Bias Voltage VB-VS 之间 Applied between VB and VS 15.0 16.5 V V IN(ON) 输入开启阈值电压 Input ON Threshold Voltage V IN -COM 之间 Applied between VIN and COM 3.0 V CC V V IN(OFF) 输入关闭阈值电压 Input OFF Threshold Voltage 0.6 V t dead 死区时间 Blanking Time for Preventing Arm-Shor V CC V BS 13.5 16.5V, T j 150 1.0 us F PWM PWM 开关频率 PWM Switching Frequency T j 150 KHz 图 开关时间定义 Fig Switching Time Definition

M 0T-A/C 版本 202 A 图 HVIC 温度检测输出温度 电压曲线 Fig Curves of HVIC Temperature detection-voltage curve 图 壳温 Tc 测试点 Fig Case Temperature Measurement

M 0T-A/C 版本 202 A 保护功能时序图 Time Charts of Protective Function 图 欠压保护时序图 低侧 Fig Undervoltage protection sequence diagram (low side) 图 欠压保护时序图 高侧 Fig Undervoltage protection sequence diagram (High side)

M 0T-A/C 版本 202 A 应用电路 Application Circuit 图 MCU 接口和自举推荐电路 Fig Recommended CPU Interface and Bootstrap Circuit with Parameters 备注 自举电路的元器件参数要根据 PWM 周期而定 以 15kHz 开关频率为例 C1=C2=4.7uF NOTE Parameters for bootsrap circuit elements are dependent on PWM algorithm. For kHz of switching frequency, typical example of parameters is an example of C1=C2=4.7uF 备注 在模块的每个输入端和 MCU 输出端之间加入 RC 去耦电路 如 和高频滤波电容 如 防止 干扰噪声引起的信号失真 NOTE RC coupling(R5 and C5) and at each input of SPM and MCU may be used to prevent improper signal due to surge noise. Signal input of SPM is compatible with standard CMOS or LSTTL outputs. 图 典型应用电路图 Fig Example of Application Circuit

M 0T-A/C 版本 202 A 备注 输入驱动高有效 IC 内部集成有一个 500K 典型值 下拉电阻 为防止发生误动作 输入布线应尽可能 短 当用 RC 去耦线路时 须确保输入信号达到开启和关断阙值电压范围 NOTE Input drive is High-Active type. There is a 500k Ω (typ.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 备注 由于 位于 MOSFET 源极与 COM 之间 的压降会影响到下侧 MOSFET 的开关特性以及自举电路的特性 因此 的稳态压降应小于 NOTE The voltage drop across affects the low side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low side MOSFET. For this reason, the voltage drop across should be less than in the steady-state. 备注 由于模块内置了专用 HVIC 其控制端子可与 CPU 端子直接相连 而不需要任何光耦或变压器等隔离电路 NOTE Thanks for HVIC inside modules, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 备注 自举电路负极应直接连接到 U V W 的端 NOTE Bootstrap negative electrodes should be connected to U V W terminals directly and separated from the main output wires. 备注 为防止误保护 A B C 连线应尽可能短 NOTE To prevent erroneous protection, the wiring of A,B,C should be as short as possible. 备注 保护线路 的时间常数建议选取在 1~2uS 关断时间可能随着布线的不同而多少有些变化 建议 选择小容差 温度补偿类型 NOTE The time constant of the protection circuit should be selected in the range of 1.0-2 μ SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R4, C3. 备注 所有电容的位置尽可能的靠近 IPM NOTE All capacitors should be mounted as close to the terminals of the IPM as possible. 备注 为了防止噪声干扰 储能电容与 P&N1 之间的引线应尽可能的短 推荐在 P&N1 端子之间加约 0.1 0.22u F 的 MLCC 低频滤波电容 NOTE To prevent surge destruction, the wiring between the smoothing capacitor and the terminals should be as short as possible. Generally, a 0.1-0.22 μ F snubber between the P-N1 terminals is recommended. 备注 VTS 引脚是 IC 内部集成的温度检测输出脚 如果不需要使用该引脚 建议用 100K 电阻下拉至 GND 不允 许悬空 NOTE The terminals of VTS is used to temperature detection, if you don t want to use it, please pull-down the terminal with a 100 K Ω resistor to GND. No connection is forbidden.

M 0T-A/C 版本 202 A 单位 mm SPE04M 0T-A(DIP23-FP) 外形封装图 Detailed Package Outline Drawings 图 SPE0 M 0T-A 封装外形图 Fig1 SPE0 M 0T-A Package Outline Drawings

M 0T-A/C 版本 202 A 图 SPE0 M 0T-C 封装外形图 Fig SPE0 M 0T-C Package Outline Drawings S PE04M 0T- C SOP 23-FP) 单位 mm

M 0T-A/C 版本 202 A 注意事项 吉林华微电子股份有限公司的产品销售分为直销和销售代理 无论哪种方式 订货时请 与公司核实 购买时请认清公司商标 如有疑问请与公司本部联系 在电路设计时请不要超过器件的绝对最大额定值 否则会影响整机的可靠性 本说明书如有版本变更不另外告知 N OTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent thus, for customers, when ordering please check with our company. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don t be hesitate to contact us. Please do not exceed the absolute maximum ratings of the device when circuit designing. Jilin Sino-microelectronics co Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 吉林华微电子股份有限公司 公司地址 吉林省吉林市深圳街 号 邮编 132013 总机 86-432- 4678411 传真 86-432- 4665812 网址 www.hwdz.com.cn C ONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432- 4678411 Fax 86-432- 4665812 Web Site www.hwdz.com.cn