SPD9511B WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Peak off-state voltage: ±190V Max  Excellent capability of absorbing transient surge  Quick response to surge voltage  Eliminate voltage overshoot caused by fast-rising transients  Low leakage current:  Solid-state silicon technology, non degenerative

Applications

 Audio/Video line  Network and telecom  Data lines and security systems  Serial ports  BNC interface  DVR http//:www.sh-willsemi.com SMB (DO-214AA) Schematic Diagram AA = Device code Y = Year code W = Week code Marking (Top View) Order information Device Package Shipping SPD9511B-2/TR SMB 3000/Tape&Reel 9511B AAYW

Will Semiconductor Ltd. 2 Revision 1.0, 2013/12/23 Electrical characteristics (TA=25 oC, unless otherwise noted) Part Number VDRM IDRM VS VBR

1 IS IH VT IT CO

V μA V V mA mA V A pF SPD9511B 190 1 260 200 800 150 4 2.2 50 Notes: 1) VBR is measured at IBR=1mA. 2) Off-state capacitance is measured at f = 1MHz, VDC = 2V. Definitions of electrical characteristics Surge Ratings Part Number Surge Level（IEC61000-4-5） Voltage waveform:10/700us Current waveform:5/320us V SPD9511B 6000

Will Semiconductor Ltd. 3 Revision 1.0, 2013/12/23 Thermal considerations Typical characteristics (TA=25oC, unless otherwise noted) Peak pulse current waveform Normalized holding current vs. Case temperature Parameter Symbol Rating Unit Operation junction temperature TJ -40~150 oC Storage temperature TSTG -55~150 oC Lead temperature TL 260 oC Junction to ambient thermal resistance RθJA 90 oC/W

Will Semiconductor Ltd. 4 Revision 1.0, 2013/12/23 Package outline dimensions SMB Symbol Dimensions in millimeter Min. Typ. Max. A 4.30 4.50 4.70 B 3.30 3.50 3.70 C 2.00 2.15 2.30 D 5.05 5.30 5.55 E 0.10 0.20 0.30 F 0.95 1.25 1.55 G 0.20 Max. H 2.10 2.30 2.50 I 1.85 2.00 2.15 Recommend land pattern (Unit: mm) Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met.