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Technical content

Features

 Reverse stand-off voltage: 12V Max.  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-4 (EFT): 40A - 5/50ns IEC61000-4-5 (surge): 12A (8/20μs).  Low capacitance: CJ = 1.2pF typ.  Ultra-low leakage current: IR <1nA typ.  Low clamping voltage.  Solid-state silicon technology

Applications

 10/100/1000 Ethernet  STB  Router  Networking  Modem http//:www.sh-willsemi.com SOD-323 Circuit diagram TB = Device code * = Month code ( A~Z) Marking (Top View) Order information Device Package Shipping SPD9112W-2/TR SOD-323 3000/Tape&Reel Pin1 Pin2 *TB

Will Semiconductor Ltd. 2 Revision 1.1, 2015/11/20 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) Notes: 1) TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Non-repetitive current pulse, according to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 300 W Peak pulse current (tp = 8/20μs) IPP 12 A ESD according to IEC61000-4-2 air discharge VESD ±30 kV ESD according to IEC61000-4-2 contact discharge ±30 Junction temperature TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC Storage temperature TSTG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage VRWM 12 V Reverse leakage current IR VRWM = 12V <1 100 nA Reverse breakdown voltage VBR IT = 1mA 13 15 17 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 23 V Dynamic resistance 1) RDYN 0.36 Ω Clamping voltage 2) VCL IPP = 1A, t p = 8/20μs 19 V IPP = 5A, t p = 8/20μs 24 V IPP = 12A, tp = 8/20μs 28 V Junction capacitance CJ VR = 0V, f = 1MHz 1.2 1.8 pF

Will Semiconductor Ltd. 3 Revision 1.1, 2015/11/20 Typical characteristics (TA = 25oC, unless otherwise noted) 8/20μs waveform per IEC61000-4-5 Clamping voltage vs. Peak pulse current Non-repetitive peak pulse power vs. Pulse time Contact discharge current waveform per IEC61000-4-2 Capacitance vs. Reverse voltage Power derating vs. Ambient temperature 1 10 100 1000 0.01 0.1 Peak pulse power (KW) Pulse time (s) 0 25 50 75 100 125 150 100 % of Rated power TA - Ambient temperature ( o t60ns30ns tr = 0.7~1ns 100 Current (%) Time (ns) 100 Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Peak pulse current (%) Time (s) T -5 -4 -3 -2 -1 0 1 2 3 4 5 1.10 1.12 1.14 1.16 1.18 1.20 1.22 1.24 1.26 1.28 1.30 f = 1MHz VAC = 50mV CJ - Junction capacitance (pF) VR - Reverse voltage (V) 0 3 6 9 12 Pulse waveform: tp = 8/20s VC - Clamping voltage (V) IPP - Peak pulse current (A)

Will Semiconductor Ltd. 4 Revision 1.1, 2015/11/20 Typical characteristics (TA=25oC, unless otherwise noted) ESD clamping (+8kV contact discharge per IEC61000-4-2) TLP Measurement ESD clamping (-8kV contact discharge per IEC61000-4-2) -25 -20 -15 -10 -5 0 5 10 15 20 25 -20 -15 -10 Z0 = 50 tr = 2ns tp = 100ns TLP current (A) TLP voltage (V)

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0.475 REF

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