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Document overview

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Technical content

Features

 Stand-off voltage: 5V Max.  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-4 (EFT): 40A - 5/50ns IEC61000-4-5 (surge): 20A (8/20μs).  Low capacitance: CJ = 1pF typ.  Ultra-low leakage current: IR = 0.1nA typ.  Low clamping voltage.  Solid-state silicon technology

Applications

 10/100 Ethernet  STB  Router  Networking  Modem http//:www.sh-willsemi.com SOD-323 Circuit diagram W = Device code * = Month code ( A~Z) Marking (Top View) Order information Device Package Shipping SPD9105W-2/TR SOD-323 3000/Tape&Reel Pin1 Pin2 Pin1 Pin25 *

Will Semiconductor Ltd. 2 Revision 1.1, 2014/ 11/24 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) 1) According to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 360 W Peak pulse current (tp = 8/20μs) IPP 20 A ESD according to IEC61000-4-2 air discharge VESD ±30 kV ESD according to IEC61000-4-2 contact discharge ±30 Junction temperature TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC Storage temperature TSTG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage VRWM 5 V Reverse leakage current IR VRWM = 5V 0.1 100 nA Reverse breakdown voltage VBR IT = 1mA 5.6 V Clamping voltage 1) VCL IPP = 1A, t p = 8/20μs 9 V IPP = 5A, t p = 8/20μs 11 V IPP = 20A, tp = 8/20μs 18 V Junction capacitance CJ VR = 0V, f = 1MHz I/O to I/O 1.0 1.5 pF

Will Semiconductor Ltd. 3 Revision 1.1, 2014/ 11/24 Typical characteristics (TA = 25oC, unless otherwise noted) 8/20μs waveform per IEC61000-4-5 Clamping voltage vs. Peak pulse current Non-repetitive peak pulse power vs. Pulse time Contact discharge current waveform per IEC61000-4-2 Capacitance vs. Reverse voltage Power derating vs. Ambient temperature -3 -2 -1 0 1 2 30.4 0.6 0.8 1.0 1.2 1.4 1.6 f = 1MHz VAC = 50mV CJ - Junction capacitance (pF) VR - Reverse voltage (V) 1 10 100 10000.01 0.1 Peak pulse power (KW) Pulse time (µs) 0 25 50 75 100 125 1500 100 % of Rated power TA - Ambient temperature ( o 0 5 10 15 20 254 Pulse waveform: tp = 8/20µs VC - Clamping voltage (V) IPP - Peak pulse current (A) t60ns30ns tr = 0.7~1ns 100 Current (%) Time (ns) 100 Front time: T1= 1.25 × T = 8µs Time to half-value: T2= 20µs Peak pulse current (%) Time (µs) T

Will Semiconductor Ltd. 4 Revision 1.1, 2014/ 11/24 Typical characteristics (TA=25oC, unless otherwise noted) ESD clamping (+8kV contact discharge per IEC61000-4-2) TLP Measurement ESD clamping (-8kV contact discharge per IEC61000-4-2) -20 -15 -10 -5 0 5 10 15 20-20 -15 -10 Z0 = 50Ω tr = 2ns tp = 100ns TLP current (A) TLP voltage (V)

Will Semiconductor Ltd. 5 Revision 1.1, 2014/ 11/24 Package outline dimensions SOD-323 Symbol Dimensions in millimeters Dimensions in Inches Min. Max. Min. Max. A 0.800 1.000 0.031 0.039 A1 0.000 0.100 0.000 0.004 A2 0.800 0.900 0.031 0.035 b 0.250 0.350 0.010 0.014 c 0.080 0.150 0.003 0.006 D 1.200 1.400 0.047 0.055 E 1.600 1.800 0.063 0.071 E1 2.500 2.700 0.098 0.106 L 0.475 REF 0.019 REF L1 0.250 0.400 0.010 0.016 θ 0° 8° 0° 8° Recommend land pattern (Unit: mm) Note: This land pattern is for your reference only. Actual pad layouts may vary depending on application.