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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
Stand-off voltage: ±3.3V Max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 25A (8/20μs) Low capacitance: CJ = 1.5pF typ. Low leakage current Low clamping voltage Solid state silicon technology
Applications
10/100/1000 Ethernet STB Router Networking Modem http//:www.sh-willsemi.com SOD-323 Circuit diagram SA = Device code * = Month code (A~Z) Marking (Top View) Order information Device Package Shipping SPD91011W-2/TR SOD-323 3000/Tape&Reel Pin1 Pin2 Pin1 Pin2SA*
Will Semiconductor Ltd. 2 Revision 1.0, 2018/04/19 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) Notes: 1) TLP parameter: Z0 = 50Ω, t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. R DYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 350 W Peak pulse current (tp = 8/20μs) IPP 25 A ESD according to IEC61000-4-2 air discharge VESD ±30 kV ESD according to IEC61000-4-2 contact discharge ±30 Junction temperature TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC Storage temperature TSTG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage VRWM ±3.3 V Reverse leakage current IR VRWM = 3.3V 100 nA Reverse breakdown voltage VBR IT = 1mA 3.5 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 9.5 V Dynamic resistance 1) RDYN 0.35 Ω Clamping voltage 2) VCL VESD = 8kV 10.0 V Clamping voltage 3) VCL IPP = 1A, tp = 8/20μs 6 V IPP = 10A, tp = 8/20μs 10 V IPP = 25A, tp = 8/20μs 16 V Junction capacitance CJ VR = 0V, f = 1MHz 1.5 2.0 pF
Will Semiconductor Ltd. 3 Revision 1.0, 2018/04/19 Typical characteristics (TA = 25oC, unless otherwise noted) 8/20μs waveform per IEC61000-4-5 Clamping voltage vs. Peak pulse current Non-repetitive peak pulse power vs. Pulse time Contact discharge current waveform per IEC61000-4-2 Capacitance vs. Reverse voltage Power derating vs. Ambient temperature -3 -2 -1 0 1 2 3 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 f = 1MHz VAC = 50mV CJ - Junction capacitance (pF) VR - Reverse voltage (V) 1 10 100 1000 0.01 0.1 Peak pulse power (kW) Pulse time (s) 0 25 50 75 100 125 150 100 % of Rated power TA - Ambient temperature ( o 0 5 10 15 20 25 Pulse waveform: tp = 8/20μs VC - Clamping voltage (V) IPP - Peak pulse current (A) t60ns30ns tr = 0.7~1ns 100 Current (%) Time (ns) 100 Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Peak pulse current (%) Time (s) T
Will Semiconductor Ltd. 4 Revision 1.0, 2018/04/19 Typical characteristics (TA=25oC, unless otherwise noted) ESD clamping (+8kV contact discharge per IEC61000-4-2) TLP Measurement ESD clamping (-8kV contact discharge per IEC61000-4-2) -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 -20 -16 -12 Z0 = 50 tr = 2ns tp = 100ns TLP current (A) TLP voltage (V) 20ns/div 10V/div 20ns/div 10V/div
Will Semiconductor Ltd. 5 Revision 1.0, 2018/04/19 PACKAGE OUTLINE DIMENSIONS SOD-323 Recommended land pattern (Unit: mm) Symbol Dimensions in Millimeters Min. Typ. Max. A 0.800 - 1.100 A1 0.800 0.850 0.900 A2 0.000 - 0.100 b 0.250 - 0.400 c 0.080 - 0.177 D1 1.600 1.700 1.800 D 2.300 - 2.800 E 1.150 - 1.400 L 0.475 Ref. L1 0.100 - 0.500 θ 0° - 8° Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 0.80 0.80 1.40 θ c L A2 A1 A b E D Side View Side ViewTop View
Will Semiconductor Ltd. 6 Revision 1.0, 2018/04/19 TAPE AND REEL INFORMATION Reel Dimensions Tape Dimensions W Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q4Q3 Q1 Q2 Q4Q3 RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm 16mm P Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Q4 User Direction of Feed RD