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www.roithner-laser.com - 1 - 15/04/13 SPD900 -9P
Description
SPD900-9P is a Si based PIN-Photodiode in hermetically sealed TO-39 STEM package. It features a 3.0x3.0mm² active area chip die offering excellent responsivity and high photocurrent. The TO- 39 housing comes with gold plated cap and flat glass lens, giving wide angle of acceptance of ±55° Maximum Ratings [Ta=25°C] Parameter Symbol Values Unit Min. Max. Reverse Breakdown Voltage V(BR)R 170 V Operating Temperature TOPR - 25 + 100 °C Storage Temperature TSTG - 30 + 125 °C Soldering Temperature TSOLDER 240 °C Characteristics [TCASE=25°C] Parameter Symbol Values Unit Min. Typ. Max. Reverse Photo Current (VR=10V, L=1000Lx) IL 110 µA Reverse Dark Current (VR=10V) ID 5 30 nA Open Circuit Voltage (VR=10V, L=1000Lx) VOC 350 mV Spectral Responsivity (Peak) λP 900 nm Half Angle of sensivity Ө1/2 ±50 deg. Total Capacitance (VR=10V, f=1Mhz) CT 25 pF Rise time (10%-90%) (VR=10V, RL=1kΩ) tr 300 ns Fall time (90%-10%) (VR=10V, RL=1kΩ) tf 600 ns Lead (Pb) free product – RoHS compliant
www.roithner-laser.com - 2 - 15/04/13 Performance Characteristics Relative Responsivity vs. Wavelength Drawing Dimensions in mm © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice