SPD61089 WILLSEMI | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

 Dual programmable transient suppressor  Wide battery voltage supports  Low gate triggering current  High holding current.  MSL: Level 3

Applications

 Switch Line Card  Access Network Line Card  PBX  VoIP Http://www.sh-willsemi.com Package & Device Symbol Pin configuration (Top view) P61089B = Device Code Y = Special Code Y =Year WW =Week Marking Order information Device Package Shipping SPD61089-8/TR SOP-8L 4000/Reel&Tape Waveshape IPPSM 10/700us 50A 10/1000us 40A

Will Semiconductor Ltd. 2 Oct, 2018 - Rev.1.5 Absolute Maximum ratings Parameter Measurement Information Parameter Symbol Value Unit Non-repetitive peak on-state pulse current 10/1000us （Telcordia (Bellcore) GR-1089-CORE, Issue 3） IPPSM A 5/310us （ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs） 2/10us (Telcordia (Bellcore) GR-1089-CORE, Issue 3) 120 Non repetitive peak on-state current (sinusoidal) 60Hz 0.1s ITSM 6.5 A 1s 4.5 5s 2.4 30s 1.3 900s 0.72 Repetitive peak off-state voltage, VGK=0 VDRM -170 V Repetitive peak gate-cathode voltage, VKA=0 VGKRM -167 V Operating free-air temperature range TA -40-85 °C Storage temperature range TSTG -40-150 °C Junction temperature TJ -40-150 °C Maximum lead temperature for soldering during 10s TL 260 °C Junction to free air thermal resistance RθJA 120 °C /W Parameter Symbol Off-state current ID Holding current IH Breakover voltage V(BO) Forward voltage VF Peak forward recovery voltage VFRM Gate-cathode impulse breakover voltage VGK(BD) Gate reverse current IGKS Gate trigger current IGT Gate-cathode trigger voltage VGT Cathode-anode off-state capacitance CKA

Will Semiconductor Ltd. 3 Oct, 2018 - Rev.1.5 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Forward voltage VF IF=5A, tW=200us 3 V Impulse peak forward recovery voltage VFRM 2/10us, IF=100A, RS=50Ω, di/dt=80A/us 10 V Off-state current ID VD= -170V, VGK=0, TJ = 25 °C -5 uA VD= -170V, VGK=0, TJ = 85 °C Impulse breakover voltage V(BO) 2/10us, ITM=100A, RS=50Ω di/dt=-80A/us, VGG=-100V -112 V Holding current IH IT=-1A, di/dt=1A/ms, VGG=-100V -150 mA Gate reverse current IGAS VGG=VGK= -167V, VKA=0, TJ = 25 °C -5 uA VGG=VGK= -167V, VKA=0, TJ = 85 °C Gate trigger current IGT IT=3A, tp(g)≥20us, VGG=-100V 5 mA Gate trigger voltage VGT IT=3A, tp(g)≥20us, VGG=-100V 2.5 V Anode-cathode offstate capacitance CKA f=1MHz,VD=1V, IG=0 , VD=-3V 110 pF f=1MHz,VD=1V, IG=0, VD=-48V 55

Will Semiconductor Ltd. 4 Oct, 2018 - Rev.1.5 Package outline dimensions SOP-8L

Will Semiconductor Ltd. 5 Oct, 2018 - Rev.1.5 Tape Dimensions Reel Dimensions