SPD51725QS WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Dual voltage-programmable protector  Supports battery voltages down to -155 V  Low gate triggering current 5 mA max.  High holding current 150 mA min.  Specified 2/10 limiting voltage  MSL: Lever 3

Applications

 Integrated Services Digital Network - Terminal Adaptors (ISDN-TA)  Wireless In the Local Loop ( WILL)  Fibre In The Loop (FITL)  Digital Added Main Line, Pair Gain (DAML)  Small Office Home Office (SOHO) Http://www.sh-willsemi.com Package & Device Symbol Pin configuration (Top view) WLSI = WILL SEMI 51725 = Device Code QS = Special Code Y =Year W =Week Marking Order information Device Package Shipping SPD51725QS-8/TR SOP-8P 4000/Reel&Tape Waveshape IPPSM 10/1000us 25A

Will Semiconductor Ltd. 2 Oct, 2018 - Rev.1.4 Absolute Maximum ratings Parameter Measurement Information Parameter Symbol Value Unit Non-repetitive peak on-state pulse current 10/1000us （Telcordia (Bellcore) GR-1089-CORE, Issue 3） IPPSM A 5/310us （ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs） 37.5 2/40 µs (IEC61000-4-5, 1.2/50 µs open circuit voltage, 2 ohm + 10 ohm) 2/10us (Telcordia (Bellcore) GR-1089-CORE, Issue 3) Non repetitive peak on-state current 50Hz/60Hz 0.1s ITSM A 1s 2.7 5s 1.5 300s 0.45 900s 0.43 Non repetitive peak gate current, 1/2 us pulse, cathodes commoned IGSM 25 A Repetitive peak off-state voltage, VGK=0 VDRM -170 V Repetitive peak gate-cathode voltage, VKA=0 VGKRM -167 V Operating free-air temperature range TA -40-85 °C Storage temperature range TSTG -40-150 °C Junction temperature TJ -40-150 °C Maximum lead temperature for soldering during 10s TL 260 °C Junction to free air thermal resistance RθJA 120 °C /W Parameter Symbol Off-state current ID Holding current IH Breakover voltage V(BO) Forward voltage VF Peak forward recovery voltage VFRM Gate-cathode impulse breakover voltage VGK(BD) Gate reverse current IGKS Gate trigger current IGT Gate-cathode trigger voltage VGT Cathode-anode off-state capacitance CKA

Will Semiconductor Ltd. 3 Oct, 2018 - Rev.1.4 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Forward voltage VF IF=5A, tW=200us 3.5 V Ramp peak forward recovery voltage VFRM di/dt=±10A/us, dv/dt≤±100V/us maximum ramp value=±10A, TJ = 25 °C 5 V Impulse peak forward recovery voltage VFRM 2/10us, ITM=-27A, RS=50Ω, di/dt=-27A/us 12 V Off-state current ID VD = VDRM, VGK =0, TJ = 25 °C -5 uA Ramp breakover voltage V(BO) di/dt=±10A/us, dv/dt≤±100V/us, VGG=-100V maximum ramp value=±10A, TJ = 25 °C -112 V Impulse breakover voltage V(BO) 2/10us, ITM=-27A, RS=50Ω di/dt=-27A/us, VGG=-100V -115 V Gate-cathode impulse breakover voltage VGK(BO) 2/10us, ITM=-27A, RS=50Ω di/dt=-27A/ps, VGG=-100V 15 V Holding current IH IT=-1A, di/dt=1A/ms, VGG=-100V -150 mA Gate reverse current IGKS VGG=VGK= VGKRM, VKA=0, TJ = 25 °C -5 uA Gate trigger current IGT IT=-3A, tp(g)≥20us, VGG=-100V 5 mA Gate trigger voltage VGT IT=-3A, tp(g)≥20us, VGG=-100V 2.5 V Anode-cathode offstate capacitance CKA f=1MHz,VD=1V, IG=0 , VD=-3V 100 pF f=1MHz,VD=1V, IG=0, VD=-48V 50

Will Semiconductor Ltd. 4 Oct, 2018 - Rev.1.4 Package outline dimensions SOP-8P Symbol Min Typ Max A 1.35 1.55 1.70 A1 0 0.10 0.15 A2 1.25 1.40 1.65 A3 0.50 0.60 0.70 b 0.38 0.51 b1 0.37 0.42 0.47 c 0.17 0.25 c1 0.17 0.20 0.23 D 4.80 4.90 5.00 D1 3.10 3.30 3.50 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 E2 2.20 2.40 2.60 e 1.17 1.27 1.37 L 0.45 0.60 0.80 L1 1.04REF L2 0.25BSC R 0.07 R1 0.07 h 0.30 0.40 0.50 Ɵ 0 8° Ɵ 1 15° 17° 19° Ɵ 2 11° 13° 15° Ɵ 3 15° 17° 19° Ɵ 4 11° 13° 15°

Will Semiconductor Ltd. 5 Oct, 2018 - Rev.1.4 Tape Dimensions Reel Dimensions