SPD50N03S2L_08 INFINEON | Alldatasheet

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Technical content

OptiMOSâ Power-Transistor Product Summary VDS 30 V RDS(on) 6.4 mW ID 50 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • High Current Rating
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated PG- TO252 -3 Marking PN03L06 Type Package SPD50N03S2L-06 G PG- TO252 -3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 200 Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25W EAS 250 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 13 Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 136 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 02-09-2008Page 1

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1.1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID = 85 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=50A RDS(on) - 6.8 9.2 mW Drain-source on-state resistance VGS=10V, ID=50A RDS(on) - 4.7 6.4 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 113A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 02-09-2008Page 2

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=50A 36 72 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 180 270 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=50A, RG=3.6W - 8 12 ns Rise time tr - 19 29 Turn-off delay time td(off) - 35 53 Fall time tf - 24 36 Gate Charge Characteristics Gate to source charge Qgs VDD =24V, ID=50A - 6 8 nC Gate to drain charge Qgd - 17.8 26.7 Gate charge total Qg VDD =24V, ID=50A, VGS=0 to 10V - 52 68 Gate plateau voltage V(plateau) VDD =24V, ID=50A - 3.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 50 A Inv. diode direct current, pulsed ISM - - 200 Inverse diode forward voltage VSD VGS=0V, IF=50A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 51 ns Reverse recovery charge Qrr - 46 58 nC 02-09-2008Page 3

1 Power dissipation

Ptot = f (TC) parameter: VGS³ 4 V 0 20 40 60 80 100 120 140 160 °C 190 TC 100 110 120 W 150 SPD50N03S2L-06 Ptot

2 Drain current

ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPD50N03S2L-06 ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD50N03S2L-06 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 2 V VDS 0 10 1 10 2 10 3 10 A SPD50N03S2L-06 ID R DS(on) V DS / I D 1 ms 100 µs 10 µs tp = 7.6µs 02-09-2008Page 4

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 A 120 SPD50N03S2L-06 ID VGS [V] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6g g 3.8 h h 4.5 i Ptot = 136W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS=10V 0 10 20 30 40 50 60 70 A 85 ID W SPD50N03S2L-06 R DS(on) VGS [V] = d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 V 4 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 100 A 130 ID S gfs 02-09-2008Page 5

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj W SPD50N03S2L-06 R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 160 Tj 0.5 1.5 V 2.5 VGS(th) 83 mA 0.415 mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD50N03S2L-06 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%) 02-09-2008Page 6

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 50 A , VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 120 140 160 180 200 220 mJ 260 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 50 A pulsed 0 10 20 30 40 50 60 nC 80 QGate V SPD50N03S2L-06 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V SPD50N03S2L-06 V(BR)DSS 02-09-2008Page 7