SPD31N05

SPD31N05 SIEMENS | Alldatasheet

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Semiconductor Group 1 30/Jan/1998 SPD31N05 SPU31N05 SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD31N05 55 V 31 A 0.04 Ω P-TO252 Q67040 - S4121 - A2 SPU31N05 55 V 31 A 0.04 Ω P-TO251 Q67040 - S4113 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpuls 124 Avalanche energy, single pulse ID = 31 A, VDD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C EAS 140 mJ Avalanche current,limited by Tjmax IAR 31 A Avalanche energy,periodic limited by Tjmax EAR 7.5 mJ Reverse diode dv/dt IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot W

Semiconductor Group 2 30/Jan/1998 SPD31N05 SPU31N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 2 K/W Thermal resistance, junction - ambient (PCB mount) RthJA ≤ 50 Thermal resistance, junction - ambient RthJA ≤ 100 IEC climatic category, DIN IEC 68-1 55 / 175 / 56 when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 55 - - V Gate threshold voltage VGS=VDS, ID = 50 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C IDSS 0.1 100 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 22 A RDS(on) - 0.03 0.04 Ω

Semiconductor Group 3 30/Jan/1998 SPD31N05 SPU31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 22 A gfs 10 - - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 720 900 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 230 300 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 125 160 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω td(on) - 10 15 ns Rise time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tr - 25 40 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω td(off) - 25 40 Fall time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tf - 20 30 Gate charge at threshold VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Qg(th) - 0.7 1 nC Gate charge at 7.0 V VDD = 40 V, ID = 31 A, VGS =0 to 7 V Qg(7) - 20 30 Gate charge total VDD = 40 V, ID = 31 A, VGS =0 to 10 V Qg(total) - 25 40 Gate plateau voltage VDD = 40 V, ID = 31 A V(plateau) - 5.9 - V

Semiconductor Group 4 30/Jan/1998 SPD31N05 SPU31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 31 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 124 Inverse diode forward voltage VGS = 0 V, IF = 62 A VSD - 1.2 1.8 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 55 85 ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.1 0.15 µC

Semiconductor Group 5 30/Jan/1998 SPD31N05 SPU31N05 Power dissipation Ptot = ƒ ( TC ) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot Drain current ID = ƒ ( TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 °C 180 TC A ID Safe operating area ID = ƒ ( VDS ) parameter: D = 0 , TC = 25 °C 0 10 1 10 2 10 3 10 A ID 10 0 10 1 10 2 V VDS R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 13.0 µs Transient thermal impedance Zth JC = ƒ ( tp ) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 30/Jan/1998 SPD31N05 SPU31N05 Typ. output characteristics ID = ƒ( VDS ) parameter: tp = 80 µs , Tj = 25 °C VDS A ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 lPtot = 75 W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ( ID ) parameter: tp = 80 µs, Tj = 25 °C 0 10 20 30 40 50 A 65 ID 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 Ω 0.13 RDS (on) VGS [V] = a 4.0 VGS [V] = a 4.5 VGS [V] = a a 5.0 b b 5.5 c c 6.0 d d 6.5 e e 7.0 f f 7.5 g g 8.0 h h 9.0 i i 10.0 j j 20.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS A ID

Semiconductor Group 7 30/Jan/1998 SPD31N05 SPU31N05 Drain-source on-resistance RDS (on) = ƒ ( Tj) parameter: ID = 22 A , VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 Ω 0.13 RDS (on) typ 98% Gate threshold voltage VGS(th)= f (Tj) parameter:VGS=VDS, ID =50µA -60 -20 20 60 100 140 V 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = ƒ ( VSD ) parameter: Tj, tp = 80 µs 0 10 1 10 2 10 3 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Semiconductor Group 8 30/Jan/1998 SPD31N05 SPU31N05 Avalanche energy EAS = ƒ ( Tj) parameter: ID = 31 A , VDD = 25 V RGS = 25 Ω , L = 291 µH 20 40 60 80 100 120 140 °C 180 Tj 100 110 120 130 mJ 150 EAS Typ. gate charge VGS = ƒ ( QGate ) parameter: ID puls = 31 A 0 4 8 12 16 20 24 28 32 nC 38 QGate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ ( Tj) -60 -20 20 60 100 °C 180 Tj V V(BR)DSS