SPD30P06PG VBSEMI | Alldatasheet

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Technical content

P-Channel 60 V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  1 00 % UIS Tested  Compliant to RoHS Direc tive 2002/95/EC

APPLICATIONS

 High Side Swi t ch for Full Bridge Converter  DC/DC Converter for LCD Display Notes: a. Duty cycle 1 %. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on T C = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)d Qg (Typ) - 60 0.053 at VGS = - 10 V - 25 260.062 at VGS = - 4.5 V - 20 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless othe rwise note) Parameter Symbol Limi t Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 25 A TC = 125 °C - 20 Pulsed Drain Current IDM - 100 Avalanche Cu rrent, Single Pulse L = 0.1 mH IAS - 22 Repetitive Avalanche Energy, Single Pulsea EAS 24.2 mJ Powe r Dissipation TC = 25 °C PD 38.5c WTA = 25 °C 2.3b, c Operating Junction and Storage Temper ature Range TJ, Tstg - 55 to 150 °C TO-252 SGD Top View Drain Connected to Tab S G D P-Channel MOSFET THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Maximum Junction-to-Ambientb t  10 s RthJA 17 21 °C/WSteady State 4 5 55 Maximum Junction-to-Case RthJC 2.7 3.25 SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwi se note) Parameter S ymbol Test Conditions Min . Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Vo ltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Bo dy Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Z ero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 ° C - 125 On-State Drain Currenta ID(on) V DS  - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 10 A 0.053 0.060 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 VGS = - 4.5 V, ID = - 5 A 0.062 0.070 Forward Tra nsconductancea gfs VDS = - 15 V, ID = - 10 A 22 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 1140 1710 pFOutput Capacitance Coss 130 Reverse Transf er Capacitance Crss 90 Total Gate Chargec Qg VDS = - 30 V, VGS = - 10 V, ID = - 10 A 26 40 nCGate-Sou rce Chargec Qgs 4.5 Gate-Drain Charg ec Qgd 7 Gate Resista nce Rg f = 1 MHz 7  Tur n-On Delay Timec td(on) VDD = - 30 V, RL = 3  ID  - 19 A, VGEN = - 10 V, Rg = 2.5  81 5 nsRise Timec tr 91 5 Turn-Off Dela y Timec td(off) 65 100 Fall T imec tf 30 45 Drain-Source B ody Diode and Characteristics (TC = 25 °C)b Continuous Current IS - 30 APulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V - 1 - 1.5 V Re verse Recovery Time trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS (25 °C, unless otherwise noted) Output Characteristics T ransconductance Capacitance 0246 8 10 VDS -) V( e g a t l oV e c ruo S - o t - n i a r D 3 V VGS = 10 thru 5 V 4 V ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) - Transconductance (S)g fs 25 °C 0 5 10 15 20 25 30 TC = - 55 °C 125 °C 300 600 900 1200 1500 1800 0 1 02 03 0 4 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Res istance vs. Drain Current Gate Charge VGS - Gate-to-Source Voltage (V) 25 °C - 55 °C TC = 125 °C ID - Drain Current (A) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 5 10 15 20 25 30 - On-Resistance (Ω) ID - Drain Current (A) RDS(on) VGS = 10 V VGS = 4.5 V 0 1 02 03 04 05 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V ID = 10 A SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) THERMAL RATINGS On-Resistance vs. Junction Tem perature 0.4 0.7 1.0 1.3 1.6 1.9 - 50 - 25 0 25 50 75 100 125 150 - On-ResistanceRDS(on) ID = 10 A VGS = 10 V TJ - Junction Temperature (°C) (normalized) Source-Drain Diod e Forward Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)IS TJ = 25 °C TJ = 150 °C Maximum Drain Current vs. C ase Temperature 0 25 50 75 100 125 150 - Drain Current (A)ID TC - Case Temperature (°C) Safe Operating Area 0.001 0.01 0.1 100 0.1 1 10 100 1000 - Drain Current (A)ID 1 s DC VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified 100 ms 10 s TC = 25 °C Single Pulse Limited by rDS(on)* BVDSS Limited Normalized Thermal Transient I mpedance, Junction-to-Ambient 10-3 10-2 0 0 60 1110-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Normalized Thermal Transien t Impedance, Junction-to-Case 0.1 0.01 10 -4 10 -3 10-2 10 -1 1 Normalized Effective Transient Thermal Impedance 100 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Single Pulse Square Wave Pulse Duration (sec) SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

  • Dimensi on L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

DS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. SPD30P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com