SPD30N03L SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated
  • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPD30N03L Tape and ReelP-TO252 Q67040-S4148-A2 SPU30N03L TubeQ67040-S4149-A2P-TO251-3-1 Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC = 25 °C, limited by bond wire TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpulse 120 Avalanche energy, single pulse ID = 30 A, VDD = 25 V, R GS = 25 Ω mJEAS 250 Avalanche energy, periodic limited by Tjmax 12 EAR Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 120 W Operating and storage temperature Tj , Tstg °C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1

Parameter ValuesSymbol Unit typ. max.min. Characteristics RthJC - - 1.25 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded RthJA - 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA -V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 21.61.2 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 150 °C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 4.5 V, ID = 30 A VGS = 10 V, ID = 30 A R DS(on) 0.013 0.0076 0.018 0.012 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 30 A gfs 20 45 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 1640 2100 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 650 820 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 280 350 Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 3.6 Ω td(on) - 16 24 ns Rise time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 3.6 Ω tr - 30 45 Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 3.6 Ω td(off) - 20 30 Fall time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 3.6 Ω tf - 25 38

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 30 A 6 nC4Q gs - - 21Q gdGate to drain charge VDD = 24 V, ID = 30 A 31.5 Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V - 54 80Q g Gate plateau voltage VDD = 24 V, ID = 30 A V(plateau) 3.31 - V- Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 30 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 120 Inverse diode forward voltage VGS = 0 V, IF = 60 A VSD - 0.97 V1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 45 ns68 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.045 0.068

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 110 W 130 SPD30N03L Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPD30N03L ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD30N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD30N03L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 65.0µs

Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS A SPD30N03L ID VGS [V] a a 2.5 b b 3.0 c c 3.5d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 120W l 10.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 10 20 30 40 A 60 ID 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 Ω 0.060 SPD30N03L R DS(on) VGS [V] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 V 5 VGS A 100 ID Typ. forward transconductance gfs = f(ID ); Tj = 25°C parameter: gfs 0 10 20 30 40 50 A 70 ID S gfs

Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 Ω 0.050 SPD30N03L R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 80 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD30N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 30 A 0 10 20 30 40 50 60 nC 80 Q Gate V SPD30N03L VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 °C 180 Tj 100 150 mJ 250 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj V SPD30N03L V(BR)DSS

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