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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated
  • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPD28N03L Tape and ReelP-TO252 Q67040-S4139-A2 SPU28N03L TubeQ67040-S4142-A2P-TO251-3-1 Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC = 25 °C, 1) TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpulse 112 Avalanche energy, single pulse ID = 30 A, VDD = 25 V, R GS = 25 Ω mJEAS 145 Avalanche energy, periodic limited by Tjmax 7.5 EAR Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 75 W Operating and storage temperature Tj , Tstg °C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1

Parameter ValuesSymbol Unit typ. max.min. Characteristics R thJC - - 2 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded R thJA - 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) R thJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA -V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 50 µA VGS(th) 21.61.2 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 150 °C IDSS µA 100 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 4.5 V, ID = 28 VGS = 10 V, ID = 28 A R DS(on) 0.023 0.013 0.028 0.018 Ω 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 28 A gfs 10 30 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 970 1220 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 390 500 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 170 215 Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 6.2 Ω td(on) - 13 20 ns Rise time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 6.2 Ω tr - 33 50 Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 6.2 Ω td(off) - 12 18 Fall time VDD = 15 V, V GS = 4.5 V, ID = 30 A, R G = 6.2 Ω tf - 22 33

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 30 A 4.5 nC3Q gs - - 13Q gdGate to drain charge VDD = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V - 32 48Q g Gate plateau voltage VDD = 24 V, ID = 30 A V(plateau) 3.9 - V- Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 30 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 112 Inverse diode forward voltage VGS = 0 V, IF = 56 A VSD - 1.1 V1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 32 ns50 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.024 0.036

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC W SPD28N03L Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPD28N03L ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD28N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD28N03L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 28.0µs

Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS A SPD28N03L ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j 7.0 k k 8.0 l Ptot = 75W l 10.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 10 20 30 40 A 55 ID 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 Ω 0.10 SPD28N03L R DS(on) VGS c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 1 2 3 V 5 VGS A ID Typ. forward transconductance gfs = f(ID ); Tj = 25°C parameter: gfs 0 5 10 15 20 25 A 35 ID S gfs

Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 28 , VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 Ω 0.070 SPD28N03L R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 50 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 4 8 12 16 20 24 28 V 36 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD28N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 30 A 0 5 10 15 20 25 30 35 40 nC 50 Q Gate V SPD28N03L VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 °C 180 Tj 100 mJ 150 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj V SPD28N03L V(BR)DSS

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