SPD22N08S2L-50

SPD22N08S2L-50 INFINEON | Alldatasheet

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Technical content

OptiMOSâ Power-Transistor Product Summary VDS 75 V RDS(on) 50 mW ID 25 A Feature

• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated P- TO252 -3-11 Marking 2N08L50 Type Package Ordering Code SPD22N08S2L-50 P- TO252 -3-11 Q67060-S6062 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=22°C ID A Pulsed drain current TC=25°C ID puls 100 Avalanche energy, single pulse ID=22A, VDD=25V, RGS=25W EAS 94 mJ Repetitive avalanche energy, limited by Tjmax1) EAR 7.5 Reverse diode dv/dt IS=22A, VDS=60V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 75 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.34 2 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 75 - - V Gate threshold voltage, VGS = VDS ID=31µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=75V, VGS=0V, Tj=25°C VDS=75V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=11A RDS(on) - 48 65 mW Drain-source on-state resistance VGS=10V, ID=11A RDS(on) - 38 50 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=22A 13 25 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 640 850 pF Output capacitance Coss - 124 165 Reverse transfer capacitance Crss - 49 74 Turn-on delay time td(on) VDD=37V, VGS=10V, ID=22A, RG=9.1W - 5 7.5 ns Rise time tr - 22 33 Turn-off delay time td(off) - 33 50 Fall time tf - 18 27 Gate Charge Characteristics Gate to source charge Qgs VDD =60V, ID=22A - 2 2.7 nC Gate to drain charge Qgd - 8 12 Gate charge total Qg VDD =60V, ID=22A, VGS=0 to 10V - 25 33 Gate plateau voltage V(plateau) VDD =60V, ID=22A - 3.3 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 25 A Inv. diode direct current, pulsed ISM - - 100 Inverse diode forward voltage VSD VGS=0V, IF=22A - 0.9 1.3 V Reverse recovery time trr VR=40V, IF=lS, diF/dt=100A/µs - 44 55 ns Reverse recovery charge Qrr - 66 83 nC

1 Power dissipation

Ptot = f (TC) parameter: VGS³ 4 V 0 20 40 60 80 100 120 140 160 °C 190 TC W

80 SPD22N08S2L-50

2 Drain current

ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPD22N08S2L-50 ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD22N08S2L-50 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD22N08S2L-50 ID R DS(on) V DS / I D 1 ms 100 µs 10 µs tp = 5.4µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 2 4 6 8 V 11 VDS A

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VGS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h Ptot = 75W h 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 4 8 12 16 20 24 28 32 36 A 42 ID 100 120 mW

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R DS(on) VGS [V] = c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 5 10 15 20 25 30 A 40 ID S gFS

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 11 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 100 120 140 160 mW

190 SPD22N08S2L-50

R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V VGS(th) 155µA 31µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 1 10 2 10 3 10 4 10 nF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A SPD22N08S2L-50 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID=22A, VDD = 25 V, RGS = 25 W 20 40 60 80 100 120 140 °C 180 Tj mJ 100 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 25 A pulsed 0 4 8 12 16 20 24 28 32 nC 40 QGate V

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0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V

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V(BR)DSS

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