SPD21N05L

SPD21N05L SIEMENS | Alldatasheet

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Semiconductor Group 1 29/Jan/1998 SPD21N05L SPU21N05L SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD21N05L 55 V 20 A 0.07 Ω P-TO252 Q67040 - S4137- A2 SPU21N05L 55 V 20 A 0.07 Ω P-TO251 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpuls Avalanche energy, single pulse ID = 20 A, VDD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C EAS mJ Avalanche current,limited by Tjmax IAR 20 A Avalanche energy,periodic limited by Tjmax EAR 5.5 mJ Reverse diode dv/dt IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt kV/µs Gate source voltage VGS ± 14 V Power dissipation TC = 25 °C Ptot W

Semiconductor Group 2 29/Jan/1998 SPD21N05L SPU21N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 2.7 K/W Thermal resistance, junction - ambient (PCB mount) RthJA ≤ 50 Thermal resistance, junction - ambient RthJA ≤ 100 IEC climatic category, DIN IEC 68-1 55 / 175 / 56 when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 55 - - V Gate threshold voltage VGS=VDS, ID = 40 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C IDSS 0.1 100 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 14 A RDS(on) 0.034 0.057 0.04 0.07 Ω

Semiconductor Group 3 29/Jan/1998 SPD21N05L SPU21N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 14 A gfs 7 14 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 560 700 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 170 215 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 95 120 Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω tr - 35 55 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω td(off) - 15 25 Fall time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω tf - 15 25 Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V Qg(th) - 0.8 1.2 nC Gate charge at 5.0 V VDD = 40 V, ID = 20 A, VGS =0 to 5 V Qg(5) - 15 23 Gate charge total VDD = 40 V, ID = 20 A, VGS =0 to 10 V Qg(total) - 24 36 Gate plateau voltage VDD = 40 V, ID = 20 A V(plateau) - 4.06 - V

Semiconductor Group 4 29/Jan/1998 SPD21N05L SPU21N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 20 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 80 Inverse diode forward voltage VGS = 0 V, IF = 40 A VSD - 1.12 1.8 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 50 75 ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.12 0.18 µC

Semiconductor Group 5 29/Jan/1998 SPD21N05L SPU21N05L Power dissipation Ptot = ƒ ( TC ) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot Drain current ID = ƒ ( TC ) parameter: VGS ≥ 4 V 0 20 40 60 80 100 120 140 °C 180 TC A ID Safe operating area ID = ƒ ( VDS ) parameter: D = 0.01 , TC = 25 °C 0 10 1 10 2 10 3 10 A ID 10 0 10 1 10 2 V VDS R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 28.0 µs Transient thermal impedance Zth JC = ƒ ( tp ) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 29/Jan/1998 SPD21N05L SPU21N05L Typ. output characteristics ID = ƒ( VDS ) parameter: tp = 80 µs VDS A ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 lPtot = 55 W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ( ID ) parameter: tp = 80 µs, Tj = 25 °C 0 4 8 12 16 20 24 28 A 36 ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 Ω 0.22 RDS (on) VGS [V] = a 2.5 VGS [V] = a 3.0 VGS [V] = a a 3.5 b b 4.0 c c 4.5 d d 5.0 e e 5.5 f f 6.0 g g 6.5 h h 7.0 i i 8.0 j j 10.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS A ID

Semiconductor Group 7 29/Jan/1998 SPD21N05L SPU21N05L Drain-source on-resistance RDS (on) = ƒ ( Tj) parameter: ID = 14 A , VGS = 4.5 V -60 -20 20 60 100 °C 180 Tj 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 Ω 0.24 RDS (on) typ 98% Gate threshold voltage VGS(th)= f (Tj) parameter:VGS=VDS,ID = 40µA -60 -20 20 60 100 140 V 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V 3.0 VGS(th) min typ max Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = ƒ ( VSD ) parameter: Tj, tp = 80 µs -1 10 0 10 1 10 2 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Semiconductor Group 8 29/Jan/1998 SPD21N05L SPU21N05L Avalanche energy EAS = f (Tj) parameter:ID=20A,VDD =25 V RGS =25 Ω , L = 450µH 20 40 60 80 100 120 140 °C 180 Tj mJ 100 EAS Typ. gate charge VGS = ƒ ( QGate ) parameter: ID puls = 20 A 0 4 8 12 16 20 24 28 nC 34 QGate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ ( Tj) -60 -20 20 60 100 °C 180 Tj V V(BR)DSS