SPD11N10

SPD11N10 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 170 m/G01 ID 10.5 A Feature /G02 N-Channel /G02 Enhancement mode /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated P-TO251 P-TO252 Marking 11N10 11N10 Type Package Ordering Code SPD11N10 P-TO252 Q67042-S4121 SPU11N10 P-TO251 Q67042-S4122 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 10.5 7.8 A Pulsed drain current TC=25°C ID puls 41.2 Avalanche energy, single pulse ID=10.5 A , VDD=25V, RGS=25/G01 EAS 60 mJ Reverse diode dv/dt IS=10.5A, VDS=80V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 50 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 21 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS =100V, VGS =0V, Tj=25°C VDS =100V, VGS =0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 1 100 nA Drain-source on-state resistance VGS =10V, ID=7.8A RDS(on) - 137 170 m/G01 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G01 2*ID*RDS(on)max , ID=7.8A 2.6 5.8 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 320 400 pF Output capacitance Coss - 72 90 Reverse transfer capacitanceCrss - 43 54 Turn-on delay time td(on) VDD =50V, VGS =10V, ID=10.5A, RG =28/G02 - 8.2 10 ns Rise time tr - 46 58 Turn-off delay time td(off) - 29 36 Fall time tf - 23 29 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID=10.5A - 2.3 2.9 nC Gate to drain charge Q gd - 7.8 9.8 Gate charge total Qg VDD =80V, ID=10.5A, VGS =0 to 10V - 14.6 18.3 Gate plateau voltage V(plateau) VDD =80V, ID=10.5A - 6.4 - V Reverse Diode Inverse diode continuous forward current IS TC =25°C - - 10.5 A Inverse diode direct current, pulsed ISM - - 41.2 Inverse diode forward voltage VSD VGS =0V, IF =10.5A - 0.93 1.25 V Reverse recovery time trr VR =50V, IF =lS , diF/dt=100A/µs - 57 71 ns Reverse recovery charge Q rr - 134 167 nC

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC W SPD11N10 Ptot

2 Drain current

ID = f (TC ) parameter: VGS/G02 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPD11N10 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 0 10 1 10 2 10 3 V VDS -1 10 0 10 1 10 2 10 A SPD11N10 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 4.9µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD11N10 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 2 4 6 8 10 V 13 VDS A ID a b c d e f gh a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 VGS[V]= 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 4 8 12 16 20 A 28 ID 100 150 200 250 300 m/G01 400 RDS(on) a b c d e f g h a= 5 b= 5.5 c= 6 d= 6.5 VGS[V]= e= 7 f= 8 g= 9 h= 10 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G02 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 V 7 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 1 2 3 4 5 6 7 8 A 10 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7.8 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 100 150 200 250 300 350 400 450 500 550 600 m/G01 750 SPD11N10 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -65 -35 -5 25 55 85 115 °C 175 Tj 1.5 2.5 V VGS(th) ID=1mA ID=21µA 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A SPD11N10 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 10.5 A , VDD = 25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 10.5 A pulsed 0 4 8 12 16 nC 24 QGate V SPD11N10 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPD11N10 V (BR)DSS

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.