SPD100N03S2L-04 INFINEON | Alldatasheet

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Technical content

OptiMOSâ Power-Transistor Product Summary VDS 30 V RDS(on) 4.2 mW ID 100 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated P-TO252-5-1 Titel: C:\\ARJ\\VPT09161.EPS Erstellt von: Gate pin 1 Drain pin 3,6 Source pin 4,5n.c.: pin 2 Marking PN03L04 Type Package Ordering Code SPD100N03S2L-04 P-TO252-5-1 Q67042-S4128 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current2) TC=100°C ID 100 100 A Pulsed drain current TC=25°C ID puls 400 Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25W EAS 325 mJ Repetitive avalanche energy, limited by Tjmax3) EAR 15 Reverse diode dv/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID = 100 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=50A RDS(on) - 5 6.3 mW Drain-source on-state resistance VGS=10V, ID=50A RDS(on) - 3.4 4.2 1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5. 2Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 3Defined by design. Not subject to production test. 4Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=100A 59 118 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 2500 3320 pF Output capacitance Coss - 980 1300 Reverse transfer capacitance Crss - 230 350 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=50A, RG=2.7W - 12 18 ns Rise time tr - 17 26 Turn-off delay time td(off) - 45 67 Fall time tf - 24 36 Gate Charge Characteristics Gate to source charge Qgs VDD =24V, ID=100A - 7.9 10.5 nC Gate to drain charge Qgd - 23.3 35 Gate charge total Qg VDD =24V, ID=100A, VGS=0 to 10V - 67.5 89.7 Gate plateau voltage V(plateau) VDD =24V, ID=100A - 3.6 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 100 A Inv. diode direct current, pulsed ISM - - 400 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=200A/µs - 46 58 ns Reverse recovery charge Qrr - 56 69 nC

1 Power dissipation

Ptot = f (TC) parameter: VGS³ 4 V 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 W 160 SPD100N03S2L-04 Ptot

2 Drain current

ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A 110 SPD100N03S2L-04 ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD100N03S2L-04 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD100N03S2L-04 ID R DS(on) V DS / I D 1 ms 100 µs 10 µs tp = 8.5µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 120 140 160 180 200 A 240 SPD100N03S2L-04 ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i Ptot = 150W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 120 140 160 A 200 ID W SPD100N03S2L-04 R DS(on) VGS [V] = c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 20 µs VGS 100 120 140 A 180 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 100 120 A 160 ID 100 110 S 130 gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj W SPD100N03S2L-04 R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.35 0.55 0.75 0.95 1.15 1.35 1.55 1.75 1.95 V 2.35 VGS(th) ID=110µA ID=6.4mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD100N03S2L-04 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A, VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 150 200 250 mJ 350 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 100 A pulsed 0 20 40 60 80 nC 110 QGate V SPD100N03S2L-04 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V SPD100N03S2L-04 V(BR)DSS

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