SPD09P06PL_08 INFINEON | Alldatasheet

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2008-07-29Rev 2.5 Page 1 SPD09P06PL G SIPMOS====Power-Transistor Product Summary VDS -60 V RDS(on) 0.25 /G01 ID -9.7 A Feature /G02 P-Channel /G02 Enhancement mode /G02 Logic Level prueb /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated PG-TO252-3 Gate pin1 Drain pin 2 Source pin 3 Type Package SPD09P06PL G PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID -9.7 -6.8 A Pulsed drain current TC=25°C ID puls -38.8 Avalanche energy, single pulse ID=-9.7 A , VDD=-25V, RGS=25/G01 EAS 70 mJ Avalanche energy, periodic limited by Tjmax EAR 4.2 Reverse diode dv/dt IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 42 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Lead free Yes

  • P-channel
  • Enhancement mode
  • Logic Level
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Pb-free lead plating; RoHS compliant

2008-07-29Rev 2.5 Page 2 SPD09P06PL G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=-250µA V(BR)DSS -60 - - V Gate threshold voltage, VGS = VDS ID=-250µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS=-60V, VGS=0V, Tj=25°C VDS=-60V, VGS=0V, Tj=150°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-20V, VDS=0V IGSS - -10 -100 nA Drain-source on-state resistance VGS=-4.5V, ID=-5.4A RDS(on) - 0.3 0.4 /G01 Drain-source on-state resistance VGS=-10V, ID=-6.8A RDS(on) - 0.2 0.25 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2008-07-29Rev 2.5 Page 3 SPD09P06PL G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max , ID=-5.4 1.8 3.5 - S Input capacitance Ciss VGS=0V, VDS=-25V, f=1MHz - 360 450 pF Output capacitance Coss - 103 130 Reverse transfer capacitance Crss - 40 50 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, ID=-5.4, RG=6/G01 - 11 17 ns Rise time tr VDD=-30V, VGS=-4.5V, ID=-5.4A, RG=6/G01 - 168 252 Turn-off delay time td(off) - 49 74 Fall time tf - 89 134 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-9.7A - 1.3 2 nC Gate to drain charge Qgd - 5.1 7.5 Gate charge total Qg VDD=-48V, ID=-9.7A, VGS=0 to -10V - 14 21 Gate plateau voltage V(plateau) VDD=-48V, ID=-9.7A - -4.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - -9.7 A Inverse diode direct current, pulsed ISM - - -38.8 Inverse diode forward voltage VSD VGS=0V, IF=-9.7A - -1.1 -1.4 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=100A/µs - 52 76 ns Reverse recovery charge Qrr - 64 96 nC

2008-07-29Rev 2.5 Page 4 SPD09P06PL G

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W SPD09P06PL Ptot

2 Drain current

I D = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A -11 SPD09P06PL ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -1-10 0-10 1-10 2-10 A SPD09P06PL ID RDS(on) =VDS /I D DC 10 ms 1 ms 100 µs tp = 11.0µs

4 Transient thermal impedance

Z thJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 K/W SPD09P06PL ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2008-07-29Rev 2.5 Page 5 SPD09P06PL G 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs VDS -10 -12 -14 -16 -18 -20 A -24 SPD09P06PL ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -5.5 i i -6.0 j j -7.0 k Ptot = 42W k -8.0 6 Typ. drain-source on resistance R DS(on) = f (ID) parameter: VGS ID 0.1 0.2 0.3 0.4 0.5 0.6 /G01 0.8 SPD09P06PL RDS(on) VGS [V] = c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -5.5 i i -6.0 j j -7.0 k k -8.0 7 Typ. transfer characteristics I D= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 VGS A ID 8 Typ. forward transconductance g fs = f(ID); Tj=25°C parameter: gfs 0 1 2 3 4 5 6 7 8 V 10 ID 0.5 1.5 2.5 S gfs

2008-07-29Rev 2.5 Page 6 SPD09P06PL G

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = -6.8 A, VGS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 /G01 0.75 SPD09P06PL RDS(on) typ 98%

10 Gate threshold voltage

V GS(th) = f (Tj) parameter: VGS = VDS, ID = -250 µA -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.4 VGS(th) typ. 98 % 2 % 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 -5 -10 -15 -20 V -30 VDS 110 210 310 pF C Ciss Coss Crss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs VSD -1-10 0-10 1-10 2-10 A SPD09P06PL IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

2008-07-29Rev 2.5 Page 7 SPD09P06PL G 13 Typ. avalanche energy EAS = f (Tj) par.: ID = -9.7 A , VDD = -25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge V GS = f (QGate) parameter: ID = -9.7 A pulsed 0 4 8 12 16 20 nC 28 QGate -10 -12 V -16 SPD09P06PL VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V (BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPD09P06PL V(BR)DSS

Rev 2.5 page 8 2008-07-29

2008-07-29Rev 2.5 Page 8 SPD09P06PL G Published by Infineon Technologies AG

81726 Munich, Germany

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