SPD09P06PL

SPD09P06PL INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

SIPMOS====Power-Transistor Product Summary VDS -60 V RDS(on) 0.25 /G01 ID -9.7 A Feature /G02 P-Channel /G02 Enhancement mode /G02 Logic Level /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated P-TO251-3-1 P-TO252 Gate pin1 Drain pin 2 Source pin 3 Type Package Ordering Code SPD09P06PL P-TO252 Q67042-S4007 SPU09P06PL P-TO251-3-1 Q67042-S4020 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID -9.7 -6.8 A Pulsed drain current TC=25°C ID puls -38.8 Avalanche energy, single pulse ID=-9.7 A , VDD=-25V, RGS=25/G01 EAS 70 mJ Avalanche energy, periodic limited by Tjmax EAR 4.2 Reverse diode dv/dt IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 42 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=-250µA V(BR)DSS -60 - - V Gate threshold voltage, VGS = VDS ID=-250µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS=-60V, VGS=0V, Tj=25°C VDS=-60V, VGS=0V, Tj=150°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-20V, VDS=0V IGSS - -10 -100 nA Drain-source on-state resistance VGS=-4.5V, ID=-5.4A RDS(on) - 0.3 0.4 /G01 Drain-source on-state resistance VGS=-10V, ID=-6.8A RDS(on) - 0.2 0.25 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max , ID=-5.4 1.8 3.5 - S Input capacitance Ciss VGS=0V, VDS=-25V, f=1MHz - 360 450 pF Output capacitance Coss - 103 130 Reverse transfer capacitance Crss - 40 50 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, ID=-5.4, RG=6/G01 - 11 17 ns Rise time tr VDD=-30V, VGS=-4.5V, ID=-5.4A, RG=6/G01 - 168 252 Turn-off delay time td(off) - 49 74 Fall time tf - 89 134 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-9.7A - 1.3 2 nC Gate to drain charge Qgd - 5.1 7.5 Gate charge total Qg VDD=-48V, ID=-9.7A, VGS=0 to -10V - 14 21 Gate plateau voltage V(plateau) VDD=-48V, ID=-9.7A - -4.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - -9.7 A Inverse diode direct current, pulsed ISM - - -38.8 Inverse diode forward voltage VSD VGS=0V, IF=-9.7A - -1.1 -1.4 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=100A/µs - 52 76 ns Reverse recovery charge Qrr - 64 96 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W SPD09P06PL Ptot

2 Drain current

ID = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A -11 SPD09P06PL ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -1 -10 0 -10 1 -10 2 -10 A SPD09P06PL ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 11.0µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD09P06PL ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs VDS -10 -12 -14 -16 -18 -20 A -24 SPD09P06PL ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -5.5 i i -6.0 j j -7.0 k Ptot = 42W k -8.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ID 0.1 0.2 0.3 0.4 0.5 0.6 /G01 0.8 SPD09P06PL RDS(on) VGS [V] = c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -5.5 i i -6.0 j j -7.0 k k -8.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 1 2 3 4 5 6 7 8 V 10 ID 0.5 1.5 2.5 S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = -6.8 A, VGS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 /G01 0.75 SPD09P06PL RDS(on) typ 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = -250 µA -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.4 VGS(th) typ. 98 % 2 % 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 -5 -10 -15 -20 V -30 VDS 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 -10 0 -10 1 -10 2 -10 A SPD09P06PL IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = -9.7 A , VDD = -25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = -9.7 A pulsed 0 4 8 12 16 20 nC 28 QGate -10 -12 V -16 SPD09P06PL VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPD09P06PL V(BR)DSS

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.