SPD09N05 INFINEON | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dtrated
  • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPD09N05 Tape and ReelP-TO252 Q67040-S4136 SPU09N05 TubeQ67040-S4130-A2P-TO251 MaximumRatings ,a tTj= 25 ˚C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC =2 5˚ C TC = 100 ˚C 9.2 6.5 ID A Pulsed drain current TC =2 5˚ C IDpulse 37 Avalanche energy, single pulse ID = 9.2 A,VDD =2 5V ,R GS =2 5Ω mJEAS 35 Avalanche energy, periodic limited byTjmax 2.4EAR Reverse diode dv/dt IS = 9.2 A,VDS =4 0V ,di/dt= 200 A/µs dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC =2 5˚ C Ptot 24 W Operating and storage temperature Tj,Tstg ˚C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1

Data Sheet 2 06.99 Thermal Characteristics Parameter ValuesSymbol Unit typ. max.min. Characteristics RthJC - - 6.25 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded RthJA - 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) RthJA Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA -V(BR)DSS 55 - V Gate threshold voltage, VGS = VDS ID = 10 µA VGS(th) 432.1 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 150 ˚C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 10 V, ID = 6.5 A R DS(on) - 0.093 0.1 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet 3 06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 6.5 A gfs 3 4.5 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 215 270 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 75 95 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 45 60 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 9.2 A, R G = 50 Ω td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 10 V, ID = 9.2 A, R G = 50 Ω tr - 20 30 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 9.2 A, R G = 50 Ω td(off) - 30 45 Fall time VDD = 30 V, VGS = 10 V, ID = 9.2 A, R G = 50 Ω tf - 25 40

Data Sheet 4 06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 40 V, ID = 9.2 A 2 nC1.3Q gs - - 3.5Q gdGate to drain charge VDD = 40 V, ID = 9.2 A 5.25 Gate charge total VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V - 7 11Q g Gate plateau voltage VDD = 40 V, ID = 9.2 A V(plateau) 5.9 - V- Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 9.2 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 37 Inverse diode forward voltage VGS = 0 V, IF = 18.5 A VSD - 1.05 V1.8 Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr - 50 ns75 Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.085 0.13

Data Sheet 5 06.99 Power Dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 ˚C 190 TC W SPD09N05 Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 ˚C 190 TC A SPD09N05 ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W SPD09N05 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS -1 10 0 10 1 10 2 10 A SPD09N05 ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 2.5µs

Data Sheet 6 06.99 Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS A SPD09N05 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 24W l 20.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 2 4 6 8 10 12 14 16 A 19 ID 0.00 0.04 0.08 0.12 0.16 0.20 0.24 Ω 0.32 SPD09N05 R DS(on) VGS [V] = c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on) max 0 1 2 3 4 5 6 7 8 V 10 VGS A ID Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 0 2 4 6 8 10 12 14 16 A 20 ID S gfs

Data Sheet 7 06.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 6.5 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 Ω 0.34 SPD09N05 R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 10 µA -60 -20 20 60 100 140 V 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A SPD09N05 IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C typ Tj = 175 ˚C (98%)

Data Sheet 8 06.99 Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 9.2 A 0 2 4 6 8 nC 11 Q Gate V SPD09N05 VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 9.2 A, VDD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 ˚C 180 Tj mJ EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 ˚C 200 Tj V SPD09N05 V(BR)DSS