SPD06N60C3

SPD06N60C3_08 INFINEON | Alldatasheet

Document overview

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• PDF pages: 11

Technical content

Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 200 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=6.2 A, V DD=50 V Avalanche current, repetitive t AR 1) I AR A Drain source voltage slope dv /dt I D=6.2 A, V DS=480 V, T j=125 °C V/ns Gate source voltage V GS static V V GS AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ±20 ±30 -55 ... 150 0.5 6.2 Value 6.2 3.9 18.6 V DS @ T j,max 650 V R DS(on),max 0.75 Ω I D 6.2 A Product Summary PG-TO252 Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Rev. 1.5 Page 1 2008-04-11 Reverse diode dv/dt dv/dt 15 V/ns7)

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.7 K/W R thJA SMD version, device on PCB, minimal footprint -- 7 5 SMD version, device on PCB, 6 cm 2 cooling area3) -5 0- Soldering temperature *) T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.2 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=600 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=3.9 A, T j=25 °C - 0.68 0.75 Ω V GS=10 V, I D=3.9 A, Gate resistance R G f =1 MHz, open drain -1- Transconductance g fs |V DS|>2|I D|R DS(on)max, Values Thermal resistance, junction - ambient Rev. 1.5 Page 2 200 8-04-11 *) reflow soldering, MSL3

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 620 - pF Output capacitance C oss - 200 - Reverse transfer capacitance C rss -1 7- Effective output capacitance, energy related4) C o(er) -2 8- Effective output capacitance, time related 5) C o(tr) -4 7- Turn-on delay time t d(on) -7- n s Rise time t r -1 2- Turn-off delay time t d(off) -5 2- Fall time t f -1 0- Gate Charge Characteristics Gate to source charge Q gs - 3.3 - nC Gate to drain charge Q gd -1 2- Gate charge total Q g -2 4 3 1 Gate plateau voltage V plateau - 5.5 - V 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=25 V, f =1 MHz V DD=480 V, V GS=10 V, I D=6.2 A, R G=12 Ω V DD=480 V, I D=6.2 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.5 Page 3 200 8-04-11 7) ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.

Parameter Symbol Conditions Unit min. typ. max. Reverse Diode Diode continuous forward current I S - - 6.2 A Diode pulse current I S,pulse - - 18.6 Diode forward voltage V SD V GS=0 V, I F=6.2 A, T j=25 °C - 0.97 1.2 V Reverse recovery time t rr - 400 - ns Reverse recovery charge Q rr - 3.5 - µC Peak reverse recovery current I rrm -2 5- A Typical Transient Thermal Characteristics V R=480 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values 6) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Symbol Value Unit Symbol Value Unit typ. typ. R th1 0.0325 K/W C th1 0.0000502 Ws/K R th2 0.0448 C th2 0.000303 R th3 0.251 C th3 0.000428 R th4 0.31 C th4 0.00243 R th5 0.231 C th5 0.00344 C th6 0.1986) Rev. 1.5 Page 4 200 8-04-11

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 0 40 80 120 160 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 10-2 V DS [V] I D [A] limited by on-state resistance single pulse0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 101 100 10-1 10-2 t p [s] Z thJC [K/W] 4 V 4.5 V 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0 5 10 15 20 V DS [V] I D [A] Rev. 1.5 Page 5 200 8-04-11

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=3.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 4 V 4.5 V 5 V 5.5 V 6 V 20 V 02468 1 0 I D [A] R DS(on) [Ω] typ 98 % 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω] 25 °C 150 °C 02468 1 0 V GS [V] I D [A] 4 V 4.5 V 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0 5 10 15 20 V DS [V] I D [A] Rev. 1.5 Page 6 200 8-04-11

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j

11 Avalanche SOA 12 Avalanche energy

I AR=f(t AR) E AS=f(T j); I D=3.1 A; V DD=50 V parameter: T j(start)

120 V 480 V

Q gate [nC] V GS [V] 100 150 200 250 20 60 100 140 180 T j [°C] E AS [mJ] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 2.5 V SD [V] I F [A] 125 °C 25 °C 10310210110010-110-210-3 t AR [µs] I AV [A] Rev. 1.5 Page 7 200 8-04-11

13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 15 Typ. C oss stored energy E oss= f(V DS) 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] Ciss Coss Crss 104 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Rev. 1.5 Page 8 200 8-04-11

Definition of diode switching characteristics Rev. 1.5 Page 9 200 8-04-11

PG-TO252-3-1: Outline , PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 1.5 Page 10 200 8-04-11

Rev. 1.5 Page 11 200 8-04-11 SPD06N60C3