SPD04P10PL INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • P-Channel
  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-4.2 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 -4.2 3.0 Value -16.8 steady state 55/175/56 -55 ... 175 ±20 260 °C 1A (250 V to 500 V) V DS -100 V R DS(on),max 850 mΩ I D -4.2 A Product Summary Type Package Marking Lead free Packing SPD04P10PL G PG-TO252-3 04P10PL Yes Non dry PG-TO-252-3 Rev 1.5 page 1 2009-02-16 Tape and reel information 1000 pcs / reel

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJC - - 3.9 K/W Thermal resistance, junction - ambient R thJA minimal footprint, steady state -- 7 5 6 cm 2 cooling area1), steady state -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 mA -100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-380 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-

2.75 A - 787 1050 mΩ

V GS=-10 V, I D=-3.0 A - 550 850 Transconductance g fs |V DS|>2|I D|R DS(on)max, 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev 1.5 page 2 2009-02-16

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 280 372 pF Output capacitance C oss -7 0 9 4 Reverse transfer capacitance C rss -3 4 5 1 Turn-on delay time t d(on) - 4.6 6.9 ns Rise time t r - 5.7 8.6 Turn-off delay time t d(off) -1 8 2 7 Fall time t f - 5.0 7.5 Gate Charge Characteristics2) Gate to source charge Q gs - 1.1 1.5 nC Gate to drain charge Q gd - 4.6 6.9 Gate charge total Q g -1 2 1 6 Gate plateau voltage V plateau - 4.1 - V Reverse Diode Diode continuous forward current I S - - -4.2 A Diode pulse current I S,pulse - - 16.8 Diode forward voltage V SD V GS=0 V, I F=-4.2 A, T j=25 °C - 0.94 1.2 V Reverse recovery time t rr -6 8 8 5 n s Reverse recovery charge Q rr - 178 223 nC 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=- 10 V, I D=-4.2 A, R G=6 Ω V DD=-80 V, I D=-4.2 A, V GS=0 to -10 V V R=50 V, I F=|I S|, di F/dt =100 A/µs Rev 1.5 page 3 2009-02-16

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 -V DS [V] -I D [A] limited by on-state resistance single pulse0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 101 100 10-1 t p [s] Z thJS [K/W] 0 40 80 120 160 T C [°C] P tot [W] 0.5 1.5 2.5 3.5 4.5 0 40 80 120 160 T C [°C] -I D [A] Rev 1.5 page 4 2009-02-16

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -2.8 V -3.2 V -3.5 V -4 V -4.5 V -3 V -5 V -10 V 200 400 600 800 1000 1200 1400 1600 02468 -I D [A] R DS(on) [mΩ] 25 °C 125 °C 02468 -V GS [V] -I D [A] 02468 -I D [A] g fs [S] -2.8 V -3 V -3.2 V -3.5 V -4 V -4.5 V -5 V-10 V 02468 1 0 -V DS [V] -I D [A] Rev 1.5 page 5 2009-02-16

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-3 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 500 1000 1500 2000 2500 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 103 102 101 0 5 10 15 20 25 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98% 102 101 100 10-1 10-2 0 0.5 1 1.5 -V SD [V] I F [A] Rev 1.5 page 6 2009-02-16

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-4.2 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA 100 110 120 130 -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C125 °C 0.1 1 10 100 1000 t AV [µs] -I AV [A] 20 V 50 V 80 V 0 5 10 15 - Qgate [nC] - VGS [V] Rev 1.5 page 7 2009-02-16

Package Outline: PG-TO-252-3

  • Logic level Rev 1.5 page 8 2009-02-16

Rev 1.5 page 9 2009-02-16 SPD04P10PL G Published by Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.