SPD04N80C3 INFINEON | Alldatasheet
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Technical content
Cool MOS™ Power Transistor VDS 800 V RDS(on) 1.3 Ω ID 4 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance P-TO252-3-1 Type Package Ordering Code SPD04N80C3 P-TO252-3-1 Q47040-S4563 Marking 04N80C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 2.5 A Pulsed drain current, tp limited by Tjmax ID puls 12 Avalanche energy, single pulse ID=0.8A, VDD =50V EAS 170 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=4A, V DD =50V EAR 0.1 Avalanche current, repetitive tAR limited by Tjmax IAR 4 A Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 63 W Operating and storage temperature Tj , Tstg -55... +150 °C
Parameter Symbol Value Unit Drain Source voltage slope V DS = 640 V, ID = 4 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 2 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 800 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=4A - 870 - Gate threshold voltage VGS(th) ID=240µΑ , VGS =V DS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =800V, V GS =0V, Tj=25°C, Tj=150°C 0.5 100 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=2.5A, Tj=25°C Tj=150°C 1.1 1.3 Ω Gate input resistance R G f=1MHz, open Drain - 0.7 -
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=2.5A - 3 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 570 - pF Output capacitance C oss - 240 - Reverse transfer capacitanceC rss - 12 - Effective output capacitance,4) energy related Co(er) V GS =0V, V DS =0V to 480V - 15.6 - pF Effective output capacitance,5) time related Co(tr) - 33.7 - Turn-on delay time td(on) V DD =400V, VGS =0/10V, ID=4A, R G =22Ω - 25 - ns Rise time tr - 15 - Turn-off delay time td(off) - 65 75 Fall time tf - 12 16 Gate Charge Characteristics Gate to source charge Q gs V DD =640V, ID=4A - 2.4 - nC Gate to drain charge Q gd - 11 - Gate charge total Qg V DD =640V, ID=4A, V GS =0 to 10V - 20 26 Gate plateau voltage V(plateau) V DD =640V, ID=4A - 6 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 4 A Inverse diode direct current, pulsed ISM - - 12 Inverse diode forward voltage VSD V GS =0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=640V, IF=IS , diF/dt=100A/µs - 520 - ns Reverse recovery charge Q rr - 4 - µC Peak reverse recovery currentIrrm - 12 - A Peak rate of fall of reverse recovery current dirr/dt - 300 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.033 K/W Rth2 0.063 Rth3 0.113 Rth4 0.432 Rth5 0.423 Rth6 0.14 Thermal capacitance Cth1 0.00008691 Ws/K Cth2 0.0003336 Cth3 0.0004755 Cth4 0.001405 Cth5 0.003503 Cth6 0.036 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W SPD04N80C3 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 6.5V 5.5V 20V
5 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS 0.5 1.5 2.5 3.5 4.5 5.5 A 6.5 ID 5.5V 4.5V 20V 6.5V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 A 6.5 ID Ω RDS(on) 5.5V 4.5V 20V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 2.5 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 5.5 Ω 7.5 SPD04N80C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C
9 Typ. gate charge VGS = f (QGate) parameter: ID = 4 A pulsed 0 4 8 12 16 20 24 28 nC 34 QGate V SPD04N80C3 VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPD04N80C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 A IAR Tj(START)=25°C Tj(START)=125°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 0.8 A, VDD = 50 V 25 50 75 100 °C 150 Tj 100 120 140 mJ 180 EAS
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 720 740 760 780 800 820 840 860 880 900 920 940 V 980 SPD04N80C3 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR =0.1mJ 10 4 10 5 10 6 Hz f W 100 PAR 15 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 500 600 V 800 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss 16 Typ. C oss stored energy Eoss=f(VDS ) 0 150 300 450 600 V 825 VDS 0.5 1.5 2.5 3.5 µJ 4.5 Eoss
Definition of diodes switching characteristics
P-TO-252-3-1 (D-PAK)
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