SPD02N60

SPD02N60 SIEMENS | Alldatasheet

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Semiconductor Group 10 / 19981 SPD02N60 SPU02N60Preliminary data SIPMOS  Power Transistor

• N-Channel
• Enhancement mode
• Avalanche rated Pin 2 Pin 3Pin 1 G D S @ V GSType VDS R DS(on) Ordering CodePackageID VGS = 10 VSPD02N60 SPU02N60 600 V 2 A 5.5 Ω P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 Continuous drain current TC = 25 °C TC = 100 °C ID A 1.3 IDpulse 8Pulsed drain current TC = 25 °C mJ135Avalanche energy, single pulse ID = 2 A, VDD = 50 V, R GS = 25 Ω , Tj = 25 °C EAS Gate source voltage ±20 VVGS Ptot WPower dissipation TC = 25 °C °COperating temperature Tj -55 ... +150 Storage temperature -55 ... +150Tstg 55/150/56IEC climatic category; DIN IEC 68-1 Maximum Ratings, at Tj = 25 °C, unless otherwise specified SymbolParameter Value Unit

Semiconductor Group 10 / 19982 SPD02N60 SPU02N60Preliminary data

Electrical Characteristics

Parameter ValuesSymbol Unit at Tj = 25 °C, unless otherwise specified max.typ.min. Thermal Characteristics - K/WThermal resistance, junction - case RthJC 2.25 - 100 -RthJAThermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) tbd RthJA Static Characteristics V(BR)DSS 600 - -Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V Gate threshold voltage, VGS = VDS ID = 1 mA VGS(th) 32.1 4 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS 0.1 100 µA IGSSGate-source leakage current VGS = 20 V, VDS = 0 V - nA10010 R DS(on) - 4.2 5.5 ΩDrain-Source on-state resistance VGS = 10 V, ID = 1.3 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Semiconductor Group 10 / 19983 SPD02N60 SPU02N60Preliminary data Parameter Symbol UnitValues at Tj = 25 °C, unless otherwise specified min. max.typ. Dynamic Characteristics -1 S1.8Transconductance VDS ≥2*ID *R DS(on)max , ID = 1.3 A gfs 460 pF350Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz -Ciss 60Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 40- 15 22-CrssReverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz 10 15td(on) -Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω ns 4025tr -Rise time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω 50Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω td(off) 35- 35Fall time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω -tf 25

Semiconductor Group 10 / 19984 SPD02N60 SPU02N60Preliminary data Parameter Symbol UnitValues at Tj = 25 °C, unless otherwise specified max.min. typ. Reverse Diode - 2 AISInverse diode continuous forward current TC = 25 °C - 8Inverse diode direct current,pulsed TC = 25 °C ISM - 0.85 1.4-Inverse diode forward voltage VGS = 0 V, IF = 4 A VSD V 300 450- nsReverse recovery time VR = 100 V, IF=IS , diF/dt = 100 A/µs trr 2.3Q rrReverse recovery charge VR = 100 V, IF=lS , diF/dt = 100 A/µs 3.45 µC-

Semiconductor Group 10 / 19985 SPD02N60 SPU02N60Preliminary data Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 A 2.4 SPD02N60 ID Power Dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W SPD02N60 Ptot Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 °C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A SPD02N60 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 30.0µs Transient thermal impedance ZthJC = f(tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W SPD02N60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 10 / 19986 SPD02N60 SPU02N60Preliminary data Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs 0 10 20 30 40 V 60 VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 SPD02N60 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 55W l 20.0 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 1.3 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω SPD02N60 R DS(on) typ 98%

Semiconductor Group 10 / 19987 SPD02N60 SPU02N60Preliminary data Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS ,ID = 1 mA -60 -20 20 60 100 V 160 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.2 VGS(th) min typ max Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max VGS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0 ID Typ. capacitances C = f(VDS ) Parameter: VGS =0 V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -2 10 -1 10 0 10 1 10 A SPD02N60 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 10 / 19988 SPD02N60 SPU02N60Preliminary data Avalanche Energy EAS = f (Tj) parameter: ID = 2 A,VDD = 50 V R GS = 25 Ω 20 40 60 80 100 120 °C 160 Tj 100 110 120 mJ 140 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPD02N60 V(BR)DSS

Semiconductor Group 10 / 19989 SPD02N60 SPU02N60Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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