SPBI11N60C3 INFINEON | Alldatasheet

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SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Cool MOS™ ====Power Transistor C Power Semiconductors OO LMOS Feature

  • =New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO 220
  • Ultra low gate charge
  • =Periodic avalanche rated
  • Extreme dv/dt rated
  • =High peak current capability
  • =Improved transconductance
  • =150 °C operating temperature Product Summary VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A P-TO262-3-1 P-TO220-3-1P-TO263-3-2 Type Package Ordering Code SPP11N60C3 P-TO220-3-1 Q67040-S4395 SPB11N60C3 P-TO263-3-2 Q67040-S4396 SPI11N60C3 P-TO262-3-1 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 33 Avalanche energy, single pulse ID=5.5A, VDD=50V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=11A, VDD=50V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt IS=11A, VDS <=VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 V/ns Gate source voltage static VGS ±20 V Gate source voltage dynamic VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Linear derating factor - - 1 W/K Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 600 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=11A V(BR)DS - 700 - Gate threshold voltage, VGS = VDS ID = 0.5 mA VGS(th) 2.1 3 3.9 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS 250 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=7A, Tj=25°C VGS=10V, ID=7A, Tj=150°C RDS(on) 0.34 1.1 0.38 1.22 Ω Gate input resistance f = 1 MHz, open drain RG - 0.86 - 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=7A - 8.3 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1460 - pF Output capacitance Coss - 610 - Reverse transfer capacitance Crss - 21 - Effective output capacitance,1) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - pF Effective output capacitance,2) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=11A, RG=6.8Ω - 10 - ns Rise time tr - 5 - Turn-off delay time td(off) - 44 70 Fall time tf - 5 9 Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=11A - 5.5 - nC Gate to drain charge Qgd - 22 - Gate charge total Qg VDD=480V, ID=11A, VGS=0 to 10V - 45 60 Gate plateau voltage V(plateau) VDD=480V, ID=11A - 5.5 - V 1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Qrr - 6 - µC Peak reverse recovery current Irrm - 41 - A Peak rate of fall of reverse recovery current dirr/dt - 1200 - A/µs Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.034 Rth3 0.056 Rth4 0.124 Rth5 0.143 Rth6 0.057 Thermal capacitance Cth1 0.0002121 Ws/K Cth2 0.0007091 Cth3 0.001184 Cth4 0.00254 Cth5 0.011 Cth6 0.092 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N60C3 Ptot

2 Drain current

ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TC A SPP11N60C3 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -1 10 0 10 1 10 2 10 A SPP11N60C3 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 13.0µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP11N60C3 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 3 6 9 12 15 18 21 V 27 VGS A ID 4,5V 5,5V 6,5V 20V 10V 6 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V

8 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N60C3 RDS(on) typ 98% 7 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data 9 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 V 15 VGS A ID 25°C 150°C

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = 0.5 mA -60 -20 20 60 100 °C 160 Tj 0.5 1.5 2.5 3.5 V VGS(th) max. typ. min. 11 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N60C3 VGS 0,8 VDS max DS maxV0,2

12 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP11N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data 6.8 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID ns t tr td(off) td(on) tf 13 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 RG 100 150 200 250 ns 350 t td(off) td(on) tr tf 14 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 20 40 60 80 Ω 120 RG 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off) 15 Typ. drain source voltage slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 RG 10000 20000 30000 40000 50000 60000 70000 80000 90000 100000 110000 V/ns 130000 dv/dt dv/dt(on) dv/dt(off)

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data 17 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 RG 0.04 0.08 0.12 0.16 mWs 0.24 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID 0.005 0.01 0.015 0.02 0.025 0.03 mWs 0.04 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.

18 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

19 Avalanche energy

EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data

20 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP11N60C3 V(BR)DSS

21 Avalanche power losses

PAR = f (f ) parameter: EAR=0.6mJ 10 4 10 5 10 6 MHz f 100 150 200 W 300 PAR 22 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 23 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Definition of diodes switching characteristics

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data P-TO220-3-1 symbol [mm] [inch] m i nm a xm i nm a x A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 2.54 typ. 0.1 typ. dimensions P-TO220-3-1 TO-263 (D²Pak/P-TO220SMD) symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E F 0.65 0.85 0.0256 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U V W X Y Z 0.3701 0.6358 0.1811 2.54 typ. 5.08 typ. 4.60 9.40 16.15 15 typ. 6.23 1.15 10.80 8° max dimensions 0.4252 0.0453 0.2453 0.1 typ. 0.2 typ. 0.5906 typ. 8° max

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data P-TO262-3-1

SPP11N60C3, SPB11N60C3 SPI11N60C3Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.