SPB80P06PG

SPP80P06PG INFINEON | Alldatasheet

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/c183 P-Channel /c183 Enhancement mode /c183 Avalanche rated /c183 dv/dt rated /c183/c32 175°C operating temperature Product Summary Drain source voltage VVDS -60 Drain-source on-state resistanceR DS(on) 0.023 /c87 Continuous drain current AID -80 Type Package SPP80P06P G PG-TO220-3 SPB80P06P G PG-TO263-3 Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue -80 -64 Continuous drain current TC = 25 °C, 1) TC = 100 °C AID Pulsed drain current TC = 25 °C ID puls -320 Avalanche energy, single pulse ID = -80 A , V DD = -25 V, R GS = 25 /c87 823 mJEAS Avalanche energy, periodic limited by Tjmax EAR 34 dv/dt 6Reverse diode dv/dt IS = -80 A, V DS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 340 W Operating and storage temperature Tj , Tstg -55...+175 °C IEC climatic category; DIN IEC 68-1 55/175/56 1Current limited by bondwire; with an R thJC = 0.4 K/W the chip is able to carry ID = -91A Lead free Yes Yes

2009-11-19Rev 1.4 Page 2 SPP80P06P G SPB80P06P G Thermal Characteristics Parameter Symbol UnitValues min. max.typ. Characteristics RthJC - 0.4-Thermal resistance, junction - case K/W - 62RthJAThermal resistance, junction - ambient, leaded - SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V- Gate threshold voltage, VGS = VDS ID = -5.5 mA -2.1 -3 -4VGS(th) Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 150 °C µA -100 IDSS -0.1 -10 IGSS - -10 -100Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -10 V, ID = -64 A RDS(on) - 0.021 0.023 /c87 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2009-11-19Rev 1.4 Page 3 SPP80P06P G SPB80P06P G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS /c179 2*ID*R DS(on)max , ID = -64 A 18gfs S-36 Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz C iss 4026 5033 pF- C oss - 15651252Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz 546437C rss - Turn-on delay time VDD = -30 V, V GS = -10 V, ID = -64 A, R G = 1 /c87 - 36 ns24td(on) Rise time VDD = -30 V, V GS = -10 V, ID = -64 A, R G = 1 /c87 tr - 2718 56 84td(off)Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -64 A, R G = 1 /c87 Fall time VDD = -30 V, V GS = -10 V, ID = -64 A, R G = 1 /c87 tf - 30 45

2009-11-19Rev 1.4 Page 4 SPP80P06P G SPB80P06P G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified UnitValuesSymbolParameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -80 A -Q gs nC4127.4 Gate to drain charge VDD = -48 V, ID = -80 A Q gd 50 75- 173-Q gGate charge total VDD = -48 V, ID = -80 A, V GS = 0 to -10 V 115 Gate plateau voltage VDD = -48 V , ID = -80 A V(plateau) - -6.2 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - -80 A Inverse diode direct current,pulsed TC = 25 °C ISM - - -320 Inverse diode forward voltage VGS = 0 V, IF = -80 A VSD - -1.2 -1.6 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 117 175 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Q rr - 420 630 nC

2009-11-19Rev 1.4 Page 5 SPP80P06P G SPB80P06P G Drain current ID = f (TC ) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 140 160°C 190 TC -10 -20 -30 -40 -50 -60 -70 A -90 SPP80P06P ID Power dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160°C 190 TC 120 160 200 240 280 W 360 SPP80P06P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80P06P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS 0 -10 1 -10 2 -10 3 -10 A SPP80P06P ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 14.0µs

2009-11-19Rev 1.4 Page 6 SPP80P06P G SPB80P06P G Typ. drain-source-on-resistance RDS(on) = f (ID ) parameter: VGS 0 -20 -40 -60 -80 -100 -120 A -160 ID 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 /c87 0.075 SPP80P06P R DS(on) b VGS [V] = b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS -20 -40 -60 -80 -100 -120 -140 -160 A -190 SPP80P06P ID VGS [V] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k Ptot = 340.00W k -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS /c179 2 x ID x R DS(on)max parameter: tp = 80 µs VGS -10 -20 -30 -40 -50 -60 A -80 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 0 -10 -20 -30 -40 -50 -60 -70 -80 A -100 ID S gfs

2009-11-19Rev 1.4 Page 7 SPP80P06P G SPB80P06P G Drain-source on-state resistance R DS(on) = f (Tj) parameter : ID = -64 A, VGS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 /c87 0.070 SPP80P06P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -5.5 mA -60 -20 20 60 100 140 °C 200 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) -60 -20 20 60 100 140 °C 200 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) typ -60 -20 20 60 100 140 °C 200 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) 98% -60 -20 20 60 100 140 °C 200 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 -5 -10 -15 V -25 VDS 2 10 3 10 4 10 5 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80P06P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

2009-11-19Rev 1.4 Page 8 SPP80P06P G SPB80P06P G Avalanche energy EAS = f (Tj) para.: ID = -80 A , VDD = -25 V, R GS = 25 /c87 25 45 65 85 105 125 145 °C 185 Tj 100 200 300 400 500 600 700 mJ 850 E AS Typ. gate charge VGS = f (Q Gate) parameter: ID = -80 A pulsed 0 20 40 60 80 100 120 140 nC 180 Q Gate -10 -12 V -16 SPP80P06P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPP80P06P V(BR)DSS

2009-11-19Rev 1.4 Page 11 SPP80P06P G SPB80P06P G Published by Infineon Technologies AG

81726 Munich, Germany

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