SPB80N10L

SPI80N10L INFINEON | Alldatasheet

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Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 14 m/G01 ID 80 A Feature /G02 N-Channel /G02 Enhancement mode /G02 Logic Level /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated P-TO263-3-2 P-TO220-3-1P-TO262-3-1 Marking 80N10L 80N10L 80N10L Type Package Ordering Code SPP80N10L P-TO220-3-1 Q67042-S4173 SPB80N10L P-TO263-3-2 Q67042-S4171 SPI80N10L P-TO262-3-1 Q67042-S4172 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC =25°C TC =100°C ID A Pulsed drain current TC =25°C ID puls 320 Avalanche energy, single pulse ID=80 A , VDD =25V, RGS =25/G01 EAS 700 mJ Avalanche energy, periodic limited by Tjmax EAR 25 Reverse diode dv/dt IS=80A, VDS =0V, di/dt=200A/µs dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC =25°C Ptot 250 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Preliminary data SPI80N10L SPP80N10L,SPB80N10L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62.5 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=2mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 2 mA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS =100V, VGS =0V, Tj=25°C VDS =100V, VGS =0V, Tj=150°C IDSS 0.1 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 10 100 nA Drain-source on-state resistance VGS =4.5V, ID=58A RDS(on) - 15 24 m/G01 Drain-source on-state resistance VGS =10V, ID=58A RDS(on) - 11 14 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Preliminary data SPI80N10L SPP80N10L,SPB80N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G02 2*ID*RDS(on)max, ID=58A 26 52 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 3630 4540 pF Output capacitance Coss - 640 800 Reverse transfer capacitanceCrss - 345 430 Turn-on delay time td(on) VDD =50V, VGS =10V, ID=80A, RG =1.6/G01 - 14 21 ns Rise time tr - 60 90 Turn-off delay time td(off) - 82 123 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID=80A - 14 21 nC Gate to drain charge Q gd - 65 98 Gate charge total Qg VDD =80V, ID=80A, VGS =0 to 10V - 160 240 Gate plateau voltage V(plateau) VDD =80V, ID=80A - 4.2 - V Reverse Diode Inverse diode continuous forward current IS TC =25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS =0V, IF =80A - 0.9 1.3 V Reverse recovery time trr VR =50V, IF =lS , diF/dt=100A/µs - 95 140 ns Reverse recovery charge Q rr - 330 500 nC

Preliminary data SPI80N10L SPP80N10L,SPB80N10L

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 140 160 180 200 220 240 W 280 SPP80N10L Ptot

2 Drain current

ID = f (TC ) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP80N10L ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 10 3 V VDS 0 10 1 10 2 10 3 10 A SPP80N10L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 15.0µs 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N10L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Preliminary data SPI80N10L SPP80N10L,SPB80N10L 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 V 6 VDS 100 120 140 160 A 190 SPP80N10L ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 250W l 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 120 140 A 170 ID m/G01 SPP80N10L RDS(on) VGS [V] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 A 60 ID S gfs

Preliminary data SPI80N10L SPP80N10L,SPB80N10L

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 58 A, VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj m/G01 110 SPP80N10L RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -30 0 30 60 90 120 °C 180 Tj 0.5 1.5 V VGS(th) Id=2mA Id=250uA 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF C C iss C oss C rss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80N10L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Preliminary data SPI80N10L SPP80N10L,SPB80N10L 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, R GS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 700 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 40 80 120 160 200 nC 260 QGate V SPP80N10L VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP80N10L V (BR)DSS

Preliminary data SPI80N10L SPP80N10L,SPB80N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N10L, BSPB80N10L and BSPI80N10L, for simplicity the device is referred to by the term SPP80N10L, SPB80N10L and SPI80N10L throughout this documentation