SPI47N10 INFINEON | Alldatasheet

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SPP47N10,SPB47N10 SIPMOS====Power-Transistor Product Summary VDS 100 V RDS(on) 33 m/G01 ID 47 A Feature /G02 N-Channel /G02 Enhancement mode /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated P-TO263-3-2 P-TO220-3-1P-TO262-3-1 Marking 47N10 47N10 47N10 Type Package Ordering Code SPP47N10 P-TO220-3-1 Q67040-S4183 SPB47N10 P-TO263-3-2 Q67040-S4173 SPI47N10 P-TO262-3-1 tbd Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID A Pulsed drain current TC=25°C ID puls 188 Avalanche energy, single pulse ID=47 A , VDD=25V, RGS=25/G01 EAS 400 mJ Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt IS=47A, VDS=0V, di/dt=200A/µs dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 175 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

SPP47N10,SPB47N10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.85 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=2mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 2 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=150°C IDSS 0.1 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 10 100 nA Drain-source on-state resistance VGS=10V, ID=33A RDS(on) - 25 33 m/G01 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

SPP47N10,SPB47N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max , ID=33A 13 26 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2000 2500 pF Output capacitance Coss - 370 465 Reverse transfer capacitance Crss - 190 240 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=47A, RG=4.7/G01 - 25 39 ns Rise time tr - 23 36 Turn-off delay time td(off) - 63 99 Fall time tf - 15 22.5 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=47A - 19 28.5 nC Gate to drain charge Qgd - 29 43.5 Gate charge total Qg VDD=80V, ID=47A, VGS=0 to 10V - 70 105 Gate plateau voltage V(plateau) VDD=80V, ID=47A - 6.03 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 47 A Inverse diode direct current, pulsed ISM - - 188 Inverse diode forward voltage VSD VGS=0V, IF=94A - 1.1 1.5 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 100 150 ns Reverse recovery charge Qrr - 400 600 nC

SPP47N10,SPB47N10

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 140 160 W 190 SPP47N10 Ptot

2 Drain current

ID = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP47N10 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 10 3 V VDS 0 10 1 10 2 10 3 10 A SPP47N10 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 7.1µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP47N10 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

SPP47N10,SPB47N10 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 VDS 100 A 120 SPP47N10 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.5 h h 8.0 i i 9.0 j j 9.0 k k 10.0 l Ptot = 175W l 20.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 A 110 ID m/G01 100 RDS(on) 10V 20V vgs[V] 5.5V 6.5V 7.5V 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 A 60 ID S gfs

SPP47N10,SPB47N10

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 33 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 100 110 m/G01 130 SPP47N10 RDS(on) typ 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = 2 mA -60 -20 20 60 100 140 V 200 Tj 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 4.4 V VGS(th) min typ max 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP47N10 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

SPP47N10,SPB47N10 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 47 A , VDD = 25 V, RGS = 25 /G01 20 40 60 80 100 120 140 °C 180 Tj 100 150 200 250 300 350 400 450 500 550 mJ 650 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 47 A pulsed 0 20 40 60 80 nC 110 QGate V SPP47N10 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP47N10 V(BR)DSS

SPP47N10,SPB47N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP47N10, BSPB47N10 and BSPI47N10, for simplicity the device is referred to by the term SPP47N10, SPB47N10 and SPI47N10 throughout this documentation