SPP46N03 SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated
  • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Packaging Type Package Ordering Code SPP46N03 Tube P-TO220-3-1 Q67040-S4742-A2 SPB46N03 Tape and Reel Q67040-S4145-A3 P-TO263-3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Value Continuous drain current TC = 25 °C, 1) TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpulse 184 Avalanche energy, single pulse ID = 46 A, VDD = 25 V, RGS = 25 Ω mJ EAS 250 Avalanche energy, periodic limited by Tjmax EAR Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C dv/dt kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 120 W Operating and storage temperature Tj , Tstg -55... +175 55/175/56 IEC climatic category; DIN IEC 68-1

typ. max. min. Characteristics RthJC 1.25 K/W Thermal resistance, junction - case Thermal resistance, junction - ambient, leded RthJA SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Values min. max. typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 2.1 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 150 °C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS nA 100 Drain-Source on-state resistance VGS = 10 V, ID = 46 A RDS(on) 0.009 0.015 Ω 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 46 A gfs S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss 1400 1750 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 645 810 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 260 325 Turn-on delay time VDD = 15 V, VGS = 10 V, ID = 46 A, RG = 6.8 Ω td(on) ns Rise time VDD = 15 V, VGS = 10 V, ID = 46 A, RG = 6.8 Ω tr Turn-off delay time VDD = 15 V, VGS = 10 V, ID = 46 A, RG = 6.8 Ω td(off) Fall time VDD = 15 V, VGS = 10 V, ID = 46 A, RG = 6.8 Ω tf

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 46 A nC Qgs Qgd Gate to drain charge VDD = 24 V, ID = 46 A 28.5 Gate charge total VDD = 24 V, ID = 46 A, VGS = 0 to 10 V Qg Gate plateau voltage VDD = 24 V, ID = 46 A V(plateau) 5.5 V Reverse Diode Inverse diode continuous forward current TC = 25 °C IS A Inverse diode direct current,pulsed TC = 25 °C ISM 184 Inverse diode forward voltage VGS = 0 V, IF = 92 A VSD 1.06 V 1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr ns Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Qrr µC 0.04 0.06

Ptot = f (TC) 100 120 140 160 °C 190 TC 100 110 W 130 SPP46N03 Ptot Drain current ID = f (TC) parameter: VGS ≥ 10 V 100 120 140 160 °C 190 TC A SPP46N03 ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp K/W SPP46N03 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (VDS) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS A SPP46N03 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 41.0µs

Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 100 A 120 SPP46N03 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 120W l 20.0 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: VGS A ID 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 Ω 0.050 SPP46N03 RDS(on) VGS [V] = b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x ID x RDS(on)max 2.8 3.2 3.8 4.2 4.8 5.2 V 6.0 VGS A ID Typ. forward transconductance gfs = f(ID); Tj = 25°C parameter: gfs A ID S gfs

Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 46 A, VGS = 10 V -60 -20 100 140 200 Tj 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0.028 Ω 0.036 SPP46N03 RDS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 80 µA -60 -20 100 140 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz V VDS pF C V VDS pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD A SPP46N03 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Typ. gate charge VGS = f (QGate) parameter: ID puls = 46 A nC QGate V SPP46N03 VGS DS max V 0,8 DS max V 0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 46 A, VDD = 25 V RGS = 25 Ω 100 120 140 180 Tj 100 150 mJ 250 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 100 140 200 Tj V SPP46N03 V(BR)DSS

Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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