SPI35N10 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

SPP35N10,SPB35N10 SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 44 m/G01 ID 35 A Feature /G01 N-Channel /G01 Enhancement mode /G01/G02 175°C operating temperature /G01 Avalanche rated /G01 dv/dt rated P-TO263-3-2 P-TO220-3-1P-TO262-3-1 Marking 35N10 35N10 35N10 Type Package Ordering Code SPP35N10 P-TO220-3-1 Q67042-S4123 SPB35N10 P-TO263-3-2 Q67042-S4103 SPI35N10 P-TO262-3-1 Q67042-S4124 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 26.4 A Pulsed drain current TC=25°C ID puls 140 Avalanche energy, single pulse ID=35 A , VDD=25V, RGS=25/G01 EAS 245 mJ Reverse diode dv/dt IS=35A, VDS=80V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

SPP35N10,SPB35N10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thJC - - 1 K/W Thermal resistance, junction - ambient, leaded R thJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area F) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=83µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS =100V, VGS =0V, Tj=25°C VDS =100V, VGS =0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 1 100 nA Drain-source on-state resistance VGS =10V, ID=26.4A RDS(on) - 36 44 m/G01 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

SPP35N10,SPB35N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G01 2*ID*RDS(on)max , ID=26.4A 12 23 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 1180 1570 pF Output capacitance Coss - 245 326 Reverse transfer capacitanceCrss - 137 206 Turn-on delay time td(on) VDD =50V, VGS =10V, ID=35A, RG =7/G02 - 12.2 18.3 ns Rise time tr - 63 95 Turn-off delay time td(off) - 39 59 Fall time tf - 23 34 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID=35A - 6.5 8.6 nC Gate to drain charge Q gd - 27 41 Gate charge total Qg VDD =80V, ID=35A, VGS =0 to 10V - 49 65 Gate plateau voltage V(plateau) VDD =80V, ID=35A - 6.1 - V Reverse Diode Inverse diode continuous forward current IS TC =25°C - - 35 A Inverse diode direct current, pulsed ISM - - 140 Inverse diode forward voltage VSD VGS =0V, IF =35A - 0.95 1.25 V Reverse recovery time trr VR =50V, IF =lS , diF /dt=100A/µs - 80 100 ns Reverse recovery charge Q rr - 230 290 nC

SPP35N10,SPB35N10

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 W 160 SPP35N10 Ptot

2 Drain current

ID = f (TC ) parameter: VGS/G01 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP35N10 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 10 3 V VDS 0 10 1 10 2 10 3 10 A SPP35N10 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 2.5µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP35N10 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

SPP35N10,SPB35N10 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 VDS A ID a b c de VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 50 60 70 80 A 100 ID 100 200 300 m/G01 500 RDS(on) VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 e b c d a 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G01 2 x ID x RDS(on)max parameter: tp = 80 µs 2 3 4 5 V 7 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 5 10 15 20 25 A 35 ID S gfs

SPP35N10,SPB35N10

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 26.4 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 100 120 140 160 m/G01 190 SPP35N10 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -65 -35 -5 25 55 85 115 °C 175 Tj 1.5 2.5 V VGS(th) ID=1mA ID=83µA 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 25 V 35 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP35N10 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

SPP35N10,SPB35N10 11 Typ. avalanche energy EAS = f (Tj) par.: ID = 35 A , VDD = 25 V, R GS = 25 /G02 25 45 65 85 105 125 145 °C 185 Tj 120 150 180 210 mJ 270 EAS 12 Typ. gate charge VGS = f (QGate) parameter: ID = 35 A pulsed 0 10 20 30 40 50 60 nC 75 QGate V SPP35N10 VGS 0,8 VDS max DS maxV0,2

13 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP35N10 V (BR)DSS

SPP35N10,SPB35N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.