SPP03N60C3 INFINEON | Alldatasheet

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SPP03N60C3, SPB03N60C3 SPA03N60C3Final data Cool MOS™ Power Transistor VDS @ Tjma x 650 V RDS(on) 1.4 Ω ID 3.2 A Feature

  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability
  • Improved transconductance
  • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 03N60C3 03N60C3 03N60C3 Type Package Ordering Code SPP03N60C3 P-TO220-3-1 Q67040-S4401 SPB03N60C3 P-TO263-3-2 Q67040-S4391 SPA03N60C3 P-TO220-3-31 - Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 3.2 3.21) 21) A Pulsed drain current, tp limited by Tjma x ID puls 9.6 9.6 A Avalanche energy, single pulse ID=2.4A, VDD =50V EAS 100 100 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD =50V EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjma x IAR 3.2 3.2 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 38 29.7 W SPP_B Operating and storage temperature Tj , Tstg -55...+150 °C

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 3.2 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 4.1 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=3.2A - 700 - Gate threshold voltage VGS(th) ID=135µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, VGS =0V, Tj=25°C Tj=150°C 0.5 µA Gate-source leakage current IGSS V GS =30V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=2A Tj=25°C Tj=150°C 1.26 3.8 1.4 Ω Gate input resistance R G f=1MHz, open drain - 10 -

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=2A - 3.4 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 400 - pF Output capacitance C oss - 150 - Reverse transfer capacitanceC rss - 5 - Effective output capacitance,5) energy related Co(er) V GS =0V, V DS =0V to 480V - 12 - Effective output capacitance,6) time related Co(tr) - 26 - Turn-on delay time td(on) V DD =350V, V GS =0/10V, ID=3.2A, R G =20Ω - 7 - ns Rise time tr - 3 - Turn-off delay time td(off) - 64 100 Fall time tf - 12 20 Gate Charge Characteristics Gate to source charge Q gs V DD =420V, ID=3.2A - 2 - nC Gate to drain charge Q gd - 6 - Gate charge total Qg V DD =420V, ID=3.2A, V GS =0 to 10V - 13 17 Gate plateau voltage V(plateau) V DD =420V, ID=3.2A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 3.2 A Inverse diode direct current, pulsed ISM - - 9.6 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =420V, IF=IS , diF/dt=100A/µs - 250 400 ns Reverse recovery charge Q rr - 1.8 - µC Peak reverse recovery currentIrrm - 15 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - - - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.054 0.054 K/W Cth1 0.00005232 0.00005232 Ws/K Rth2 0.103 0.103 Cth2 0.0002034 0.0002034 Rth3 0.178 0.178 Cth3 0.0002963 0.0002963 Rth4 0.757 0.356 Cth4 0.0009103 0.0009103 Rth5 0.682 0.655 Cth5 0.002084 0.004434 Rth6 0.202 2.535 Cth6 0.024 0.412 SPP_B SPP_B External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W SPP03N60C3 Ptot

2 Power dissipation FullPAK

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 V 24 VDS A ID 20V 6.5V 5.5V 4.5V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 V 24 VDS A ID 20V 5.5V 4.5V 3.5V

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 6 A 8 ID Ω RDS(on) 4.5V 5.5V 6.5V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω SPP03N60C3 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 150°C 25°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed 0 2 4 6 8 10 12 14 16 nC 20 QGate V SPP03N60C3 VGS 0,8 VDS max DS maxV0,2

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -2 10 -1 10 0 10 1 10 A SPP03N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =20Ω 0 0.5 1 1.5 2 2.5 A 3.5 ID ns 100 t td(off) tf td(on) tr 15 Typ. switching time t = f (RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=3.2 A 0 20 40 60 80 100 120 140 160 Ω 200 RG 100 150 200 250 300 350 400 ns 500 t td(off) tf td(on) tr 16 Typ. drain current slope di/dt = f(R G ), inductive load, Tj = 125°C par.: V DS =380V, VGS =0/+13V, ID=3.2A 0 40 80 120 160 Ω 220 R G 150 300 450 600 750 900 1050 1200 A/µs 1500 di/dt di/dt(on) di/dt(off)

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data 17 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=3.2A 0 20 40 60 80 100 120 140 160 Ω 200 RG V/ns dv/dt dv/dt(on) dv/dt(off) 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =20Ω 0 0.5 1 1.5 2 2.5 A 3.5 ID 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 mWs 0.01 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 19 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=3.2A 0 40 80 120 160 Ω 220 RG 0.006 0.012 0.018 0.024 0.03 0.036 0.042 0.048 mWs 0.06 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.

20 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 A 3.5 IAR Tj(START)=25°C Tj(START)=125°C

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data

21 Avalanche energy

EAS = f (Tj) par.: ID = 2.4 A, V DD = 50 V 20 40 60 80 100 120 °C 160 Tj mJ 120 EAS

23 Avalanche power losses

PAR = f (f ) parameter: E AR =0.2mJ 10 4 10 5 10 6 Hz f 100 120 140 160 W 200 PAR

22 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP03N60C3 V(BR)DSS 24 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data 25 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS 0.5 1.5 µJ 2.5 Eoss Definition of diodes switching characteristics

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-263-3-2 (D2-PAK)

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)

SPP03N60C3, SPB03N60C3 SPA03N60C3Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.