SPA15N65C3 INFINEON | Alldatasheet

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Technical content

Features

  • Low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC 1) for target applications
  • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current2) I D T C=25 °C A T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=3 A, V DD=50 V 460 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=5 A, V DD=50 V Avalanche current, repetitive t AR 3),4) I AR A MOSFET dv /dt ruggedness d v /dt V DS=0...480 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Mounting torque M3 and M3.5 screws 50 Ncm Value 9.4 ±30 -55 ... 150 0.8 5.0 ±20 V DS 650 V R DS(on),max 0.28 Ω Q g,typ 63 nC Product Summary Type Package SPA15N65C3 PG-TO220-3-31 Marking 15N65C3 PG-TO220-3-31 Rev. 2.0 page 1 2008-03-12

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current2) I S A Diode pulse current3) I S,pulse 45 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 3.7 K/W R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 650 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=0.675 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.5 25 µA V DS=600 V, V GS=0 V, T j=150 °C -2 5- Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.4 A, T j=25 °C - 0.25 0.28 Ω V GS=10 V, I D=9.4 A, Gate resistance R G f =1 MHz, open drain - 1.4 - Ω Values Thermal resistance, junction - ambient Value T C=25 °C Rev. 2.0 page 2 2008-03-12

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1600 - pF Output capacitance C oss - 540 - Effective output capacitance, energy related5) C o(er) -6 7- Effective output capacitance, time related6) C o(tr) - 120 - Turn-on delay time t d(on) -3 2- n s Rise time t r -1 4- Turn-off delay time t d(off) -7 0- Fall time t f -1 1- Gate Charge Characteristics Gate to source charge Q gs -9- n C Gate to drain charge Q gd -2 9- Gate charge total Q g -6 3 Gate plateau voltage V plateau - 5.4 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=15 A, T j=25 °C - 1.0 1.2 V Reverse recovery time t rr - 420 - ns Reverse recovery charge Q rr -8- µ C Peak reverse recovery current I rrm -3 2- A 1) J-STD20 and JESD22 2) Limited only by maximum temperature. 3) Pulse width t p limited by T j,max Values V GS=0 V, V DS=25 V, f =1 MHz V DD=400 V, V GS=10 V, I D=15 A, R G=6.8 Ω V DD=480 V, I D=15 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V V R=480 V, I F=I S, di F/dt =100 A/µs 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. Rev. 2.0 page 3 2008-03-12

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics Z(thJC)=f(tp) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 0 40 80 120 160 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 0 5 10 15 20 25 V DS [V] I D [A] limited by on-state resistance Rev. 2.0 page 4 2008-03-12

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D= 9.4 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j typ98 % 0.2 0.4 0.6 0.8 -50 0 50 100 150 T j [°C] R DS(on) [Ω] 25°C 150°C 02468 1 0 V GS [V] I D [A] 4.5 V 5 V

5.5 V6 V

V DS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 20 V 01 0 2 0 3 0 I D [A] R DS(on) [Ω] Rev. 2.0 page 5 2008-03-12

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D= 15 A pulsed I F=f(V SD) parameter: V DD parameter: T j

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=3 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] 120 V 480 V 02 0 4 0 6 0 8 0 Q gate [nC] V GS [V] 580 600 620 640 660 680 700 720 740 -50 -10 30 70 110 150 T j [°C] V BR(DSS) [V] 100 200 300 400 500 20 60 100 140 180 T j [°C] E AS [mJ] Rev. 2.0 page 6 2008-03-12

13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Ciss Coss Crss 105 104 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] Rev. 2.0 page 7 2008-03-12

Definition of diode switching characteristics Rev. 2.0 page 8 2008-03-12

PG-TO220-3-31/-3-111: Outline/Fully isolated package (2500VAC; 1 minute) Rev. 2.0 page 9 2008-03-12

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2008-03-12