SPA15N60C3_09 INFINEON | Alldatasheet
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Technical content
Rev. 3.2 page 1 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.28 Ω ID 15 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
- PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO220FP P G-TO262 PG-TO220 P-TO220-3-31 1 2 3 Marking 15N60C3 15N60C3 15N60C3 Type Package Ordering Code SPP15N60C3 PG-TO220 Q67040-S4600 SPI15N60C3 PG-TO262 Q67040-S4601 SPA15N60C3 PG-TO220FP SP000216325 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 9.4 151) 9.41) A Pulsed drain current, tp limited by Tjmax ID puls 45 45 A Avalanche energy, single pulse ID=7.5A, VDD =50V EAS 460 460 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD =50V EAR 0.8 0.8 Avalanche current, repetitive tAR limited by Tjmax IAR 15 15 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 156 34 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns6)
SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 15 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.8 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=15A - 700 - Gate threshold voltage VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, V GS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =30V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=9.4A Tj=25°C Tj=150°C 0.25 0.68 0.28 Ω Gate input resistance R G f=1MHz, open drain - 1.23 - Rev. 3.2 page 2 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=9.4A - 11.9 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 1660 - pF Output capacitance C oss - 540 - Reverse transfer capacitanceC rss - 40 - Effective output capacitance,4) energy related Co(er) V GS =0V, V DS =0V to 480V - 80 - Effective output capacitance,5) time related Co(tr) - 127 - Turn-on delay time td(on) V DD =480V, VGS =0/10V, ID=15A, R G =4.3Ω - 10 - ns Rise time tr - 5 - Turn-off delay time td(off) - 50 80 Fall time tf - 5 10 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=15A - 7 - nC Gate to drain charge Q gd - 29 - Gate charge total Qg V DD =480V, ID=15A, V GS =0 to 10V - 63 - Gate plateau voltage V(plateau) V DD =480V, ID=15A - 5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS. 6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 3.2 page 3 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 15 A Inverse diode direct current, pulsed ISM - - 45 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =480V, IF=IS , diF/dt=100A/µs - 460 - ns Reverse recovery charge Q rr - 27 - µC Peak reverse recovery currentIrrm - 55 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1300 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.012 0.012 K/W Cth1 0.0002495 0.0002495 Ws/K Rth2 0.023 0.023 Cth2 0.0009406 0.0009406 Rth3 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.156 0.176 Cth4 0.00362 0.00362 Rth5 0.178 0.371 Cth5 0.009046 0.008025 Rth6 0.072 2.522 Cth6 0.412 0.412 SPP_I SPP_I External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t) Rev. 3.2 page 4 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 W 170 SPP15N60C3 Ptot
2 Power dissipation FullPAK
P tot = f (TC ) 0 20 40 60 80 100 120 °C 160 Tj W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC Rev. 3.2 page 5 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 28 VDS A ID Vgs = 20V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 28 VDS A ID Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V Rev. 3.2 page 6 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 A 30 ID 0.4 0.6 0.8 1.2 1.4 Ω 1.8 RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 9.4 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 Ω 1.6 SPP15N60C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 V 10 VGS A ID 25°C 150°C 12 Typ. gate charge V GS = f (QGate) parameter: ID = 15 A pulsed 0 10 20 30 40 50 60 70 80 nC 100 QGate V SPP15N60C3 VGS 0,8 VDS max DS maxV0,2 Rev. 3.2 page 7 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP15N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
14 Avalanche SOA
I AR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C
15 Avalanche energy
E AS = f (Tj) par.: ID = 7.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0.1 0.2 0.3 mJ 0.5 EAS
16 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP15N60C3 V(BR)DSS Rev. 3.2 page 8 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
17 Avalanche power losses
PAR = f (f ) parameter: EAR =0.8mJ 10 4 10 5 10 6 Hz f 100 200 300 400 500 600 700 W 900 PAR 18 Typ. capacitances C = f (V DS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C Ciss Coss Crss 19 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS µJ Eoss Rev. 3.2 page 9 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 Definition of diodes switching characteristics Rev. 3.2 page 10 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 page 11 2009-12-22
SPI16N50C3, SPA16N50C3 PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev 3.2 page 12 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO262-3-1/PG-TO262-3-21 (I²-PAK) Rev. 3.2 page 13 2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3 Published by Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 page 14 2009-12-22