SPA13003 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • High breakdown voltage.
  • High-speed switching.
  • Wide ASO.
  • Adoption of MBIT process. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 700 V Collector-to-Emitter Voltage V CES 700 V Collector-to-Emitter Voltage V CEO 400 V Emitter-to-Base Voltage V EBO 8V Collector Current I C 1A Collector Current (Pulse) I CP PW≤300μs, duty cycle≤10% 2 A Base Current I B 0.5 A Collector Dissipation P C 0.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=400V, IE=0A 10 μA Emitter Cutoff Current I EBO VEB=5V, IC=0A 10 μA DC Current Gain hFE1V CE=5V, IC=0.1A 15 35 hFE2V CE=5V, IC=0.5A 5 hFE3V CE=5V, IC=1mA 7 Continued on next page. 21209CB MS IM TC-00001819 SANYO Semiconductors DATA SHEET SPA13003 (13003 series) NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications www.semiconductor-sanyo.com/network

No. A1402-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Gain-Bandwidth Product f T VCE=10V, IC=0.1A 20 MHz Output Capacitance Cob V CB=10V, f=1MHz 10 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=0.5A, IB=0.1A 0.8 V Base-to-Emitter Saturation Voltage V BE(sat) I C=0.5A, IB=0.1A 0.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=1mA, IE=0A 700 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=100μA, RBE=0Ω 700 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=5mA, RBE=∞ 400 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC=0A 8 V Turn-On Time t on IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V 1.0 μs Storage Time t stg IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V 1.0 μs Fall Time t f IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V 0.3 μs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7524-004 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.31.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA VR RB VCC=200VVBE= --5V 50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A IC -- VCE 0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT13700 IT13701 Ta=120 --40 IB=0mA 10mA 20mA 30mA 60mA70mA80mA90mA 200mA VCE=5V150mA 100mA 40mA 50mA

No. A1402-3/4 Collector Current, IC -- A Reverse Bias A S O SW Time -- IC Switching Time, SW Time -- μs Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Forward Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- V VBE(sat) -- IC Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A IT14417 0.1 1.0 0.01 100 23 5 7 1000 L=500μH IB2= --0.2A Ta=25°C Single pulse Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT13707 0.1 1.0 0.1 5 1.023 7 IC / IB1=10 IB2 / IB1=10 R Load tstg tf 1.0 Ta= --40°C 25°C 120°C IC / IB=5 IT13706 0.01 325 7 0.1 23 5 1.07 0.01 0.1 1.0 23 5 7 0.1 23 5 7 1.0 0.001 0.01 0.1 1.02 3 57 2 3 57 2 3 57 IT13702 IT13705 VCE=0.7V Ta=120°C 25°C --40°C 0.001 0.01 0.1 1.02 3 57 2 3 57 2 3 57 IT13703 IC / IB=5 25°C Ta=120 --40°C VCE=5V Ta=120°C 25°C --40°C 1.0 10 100 23 5 7 23 7 5 IT13704 f=1MHz IT14369 0.001 0.01 0.1 0.1 1.0 35 722 1035 7 2 300 μs1ms 10ms DC operation ICP=2A IC=1A 100 μs 10035 7 2 35 7 1.0 Ta=25°C Single pulse

No. A1402-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2009. Specifi cations and information herein are subject to change without notice. Ambient Temperature, Ta -- °C PC -- Ta IT14370 0.2 0.1 0.3 0.4 0.6 0.5 0.7 2006 0 40 80 100 120 140 160 Collector Dissipation, PC -- W