SPA11N80C3

SPP11N80C3 INFINEON | Alldatasheet

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Technical content

Cool MOS™ Power Transistor VDS 800 V RDS(on) 0.45 Ω ID 11 A Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 11N80C3 11N80C3 Type Package Ordering Code SPP11N80C3 P-TO220-3-1 Q67040-S4438 SPA11N80C3 P-TO220-3-31 Q67040-S4439 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.1 111) 7.11) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.2A, VDD =50V EAS 470 470 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD =50V EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 156 41 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C

Parameter Symbol Value Unit Drain Source voltage slope V DS = 640 V, ID = 11 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.8 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 800 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=11A - 870 - Gate threshold voltage VGS(th) ID=680µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =800V, V GS =0V, Tj=25°C Tj=150°C 0.5 200 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=7.1A Tj=25°C Tj=150°C 0.39 1.1 0.45 Ω Gate input resistance R G f=1MHz, open drain - 0.7 -

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=7.1A - 7.5 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 1600 - pF Output capacitance C oss - 800 - Reverse transfer capacitanceC rss - 40 - Effective output capacitance,4) energy related Co(er) V GS =0V, V DS =0V to 480V - 44.3 - Effective output capacitance,5) time related Co(tr) - 33.9 - Turn-on delay time td(on) V DD =400V, VGS =0/10V, ID=11A, R G =7.5Ω - 25 - ns Rise time tr - 15 - Turn-off delay time td(off) - 72 82 Fall time tf - 7 10 Gate Charge Characteristics Gate to source charge Q gs V DD =640V, ID=11A - 6 - nC Gate to drain charge Q gd - 25 - Gate charge total Qg V DD =640V, ID=11A, V GS =0 to 10V - 50 60 Gate plateau voltage V(plateau) V DD =640V, ID=11A - 6 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.

Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =640V, IF=IS , diF/dt=100A/µs - 550 - ns Reverse recovery charge Q rr - 10 - µC Peak reverse recovery currentIrrm - 33 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1000 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.012 0.012 K/W Cth1 0.0002493 0.0002493 Ws/K Rth2 0.023 0.023 Cth2 0.0009399 0.0009399 Rth3 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.154 0.176 Cth4 0.003617 0.003617 Rth5 0.175 0.371 Cth5 0.009186 0.00802 Rth6 0.071 2.522 Cth6 0.074 0.412 SPP SPP External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 W 170 SPP11N80C3 Ptot

2 Power dissipation FullPAK

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 5.5V 6.5V 20V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 4.5V 5.5V 20V 6.5V

9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 A 18 ID 0.8 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Ω RDS(on) 4.5V 5.5V 6.5V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 Ω 2.6 SPP11N80C3 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 20 40 60 80 nC 110 QGate V SPP11N80C3 VGS 0,8 VDS max DS maxV0,2

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP11N80C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

14 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C

15 Avalanche energy

EAS = f (Tj) par.: ID = 2.2 A, VDD = 50 V 20 40 60 80 100 120 °C 150 Tj 100 150 200 250 300 350 400 mJ 500 EAS

16 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 720 740 760 780 800 820 840 860 880 900 920 940 V 980 SPP11N80C3 V(BR)DSS

17 Avalanche power losses

PAR = f (f ) parameter: EAR =0.2mJ 10 4 10 5 10 6 Hz f 100 W 200 PAR 18 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 500 600 V 800 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss 19 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 500 600 V 800 VDS µJ Eoss

Definition of diodes switching characteristics

A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)

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