SPP11N60C3_09 INFINEON | Alldatasheet
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2009-11-27Rev. 3.2 Page 1 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
- PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO262PG-TO220FP PG-TO220 P-TO220-3-31 1 2 3 Marking 11N60C3 11N60C3 11N60C3 Type Package Ordering Code SPP11N60C3 PG-TO220 Q67040-S4395 SPI11N60C3 PG-TO262 Q67042-S4403 SPA11N60C3 Q67040-S4408 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 111) 71) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=5.5A, VDD =50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD =50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns7) 11N60C3PG-TO220FP Q67040-S4408 SPA11N60C3E8185 11N60C3PG-TO220
2009-11-27Rev. 3.2 Page 2 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, V GS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =30V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=7A Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance R G f=1MHz, open drain - 0.86 -
2009-11-27Rev. 3.2 Page 3 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=7A - 8.3 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 1200 - pF Output capacitance C oss - 390 - Reverse transfer capacitanceC rss - 30 - Effective output capacitance,5) energy related Co(er) V GS =0V, V DS =0V to 480V - 45 - Effective output capacitance,6) time related Co(tr) - 85 - Turn-on delay time td(on) V DD =380V, VGS =0/10V, ID=11A, R G =6.8Ω - 10 - ns Rise time tr - 5 - Turn-off delay time td(off) - 44 70 Fall time tf - 5 9 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=11A - 5.5 - nC Gate to drain charge Q gd - 22 - Gate charge total Qg V DD =480V, ID=11A, V GS =0 to 10V - 45 60 Gate plateau voltage V(plateau) V DD =480V, ID=11A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS. 7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2009-11-27Rev .3.2 Page 4 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Q rr - 6 - µC Peak reverse recovery currentIrrm - 41 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K Rth2 0.03 0.03 Cth2 0.0007106 0.0007106 Rth3 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 SPP_I SPP_I External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2009-11-27Rev. 3.2 Page 5 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N60C3 Ptot
2 Power dissipation FullPAK
P tot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
2007-08-30Rev.3. 2 Page 6 2SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 3 6 9 12 15 18 21 V 27 VDS A ID 4,5V 5,5V 6,5V 20V 10V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V
2009-11-27Rev. 3.2 Page 7 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N60C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 V 15 VGS A ID 25°C 150°C 12 Typ. gate charge V GS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N60C3 VGS 0,8 VDS max DS maxV0,2
2009-11-27Rev. 3.2 Page 8 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (I D), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =6.8Ω 0 2 4 6 8 A 12 ID ns t tr td(off) td(on) tf 15 Typ. switching time t = f (R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 R G 100 150 200 250 ns 350 t td(off) td(on) tr tf 16 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=11A 0 20 40 60 80 Ω 120 R G 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off)
2009-11-27Rev .3.2 Page 9 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 17 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 R G 100 110 120 V/ns 140 dv/dt dv/dt(off) dv/dt(on) 18 Typ. switching losses E = f (I D), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =6.8Ω 0 2 4 6 8 A 12 ID 0.005 0.01 0.015 0.02 0.025 0.03 mWs 0.04 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 19 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 R G 0.04 0.08 0.12 0.16 mWs 0.24 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses
20 Avalanche SOA
IAR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
2009-11-27Rev. 3.2 Page 10 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
21 Avalanche energy
EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS
23 Avalanche power losses
P AR = f (f ) parameter: EAR =0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR
22 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP11N60C3 V(BR)DSS 24 Typ. capacitances C = f (V DS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C C iss C oss C rss
2009-11-27Rev .3.2 Page 11 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 25 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss Definition of diodes switching characteristics
2009-11-27Rev. 3.2 Page 12 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO-220-3-1, PG-TO-220-3-21
2009-11-27Rev. 3.2 Page 13 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute).
2009-11-27Rev. 3.2 Page 14 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO-262-3-1 (I²-PAK)
2009-11-27Rev. 3.2 Page 15 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute)
2009-11-27Rev. 3.2 Page 16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Published by Infineon Technologies AG
81726 Munich, Germany
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