SPA07N65C3

SPP07N65C3 INFINEON | Alldatasheet

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2004-04-07Rev. 1.0 Page 1 SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS™ Power Transistor VDS @ Tjmax 730 V RDS(on) 0.6 Ω ID 7.3 A Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO220-3-1P-TO262-3-1 P-TO220-3-1 2 3 P-TO220-3-31 1 2 3 Marking 07N65C3 07N65C3 07N65C3 Type Package Ordering Code SPP07N65C3 P-TO220-3-1 Q67040-S4624 SPI07N65C3 P-TO262-3-1 Q67040-S4623 SPA07N65C3 P-TO220-3-31 Q67040-S4622 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 7.31) 4.61) A Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A Avalanche energy, single pulse ID=1.5A, VDD=50V EAS 230 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 2.5 2.5 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 W Operating and storage temperature Tj , Tstg -55...+150 °C

2004-04-07Rev. 1.0 Page 2 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=2.5A - 700 - Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C Tj=150°C 0.5 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Tj=25°C Tj=150°C 0.54 1.46 0.6 Ω Gate input resistance RG f=1MHz, open drain - 0.8 -

2004-04-07Rev. 1.0 Page 3 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=4.6A - 6 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 790 - pF Output capacitance Coss - 260 - Reverse transfer capacitance Crss - 16 - Effective output capacitance,4) energy related Co(er) VGS=0V, VDS=0V to 480V - 30 - Effective output capacitance,5) time related Co(tr) - 55 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=7.3A, RG=12Ω, Tj=125°C - 6 - ns Rise time tr - 3.5 - Turn-off delay time td(off) - 60 100 Fall time tf - 7 15 Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=7.3A - 3 - nC Gate to drain charge Qgd - 9.2 - Gate charge total Qg VDD=480V, ID=7.3A, VGS=0 to 10V - 21 27 Gate plateau voltage V(plateau) VDD=480V, ID=7.3A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2004-04-07Rev. 1.0 Page 4 SPP07N65C3, SPI07N65C3 SPA07N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 7.3 A Inverse diode direct current, pulsed ISM - - 21.9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Qrr - 4 - µC Peak reverse recovery current Irrm - 28 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 800 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K Rth2 0.046 0.046 Cth2 0.0004578 0.0004578 Rth3 0.085 0.085 Cth3 0.000645 0.000645 Rth4 0.308 0.195 Cth4 0.001867 0.001867 Rth5 0.317 0.45 Cth5 0.004795 0.007558 Rth6 0.112 2.511 Cth6 0.045 0.412 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2004-04-07Rev. 1.0 Page 5 SPP07N65C3, SPI07N65C3 SPA07N65C3

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W 100 SPP07N65C3 Ptot

2 Power dissipation FullPAK

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

2004-04-07Rev. 1.0 Page 6 SPP07N65C3, SPI07N65C3 SPA07N65C3

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 VDS 25 V A ID 4,5V 5,5V 6,5V 20V 10V 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 6.5V

2004-04-07Rev. 1.0 Page 7 SPP07N65C3, SPI07N65C3 SPA07N65C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 A 15 ID Ω RDS(on) 4.5V 5.5V 6.5V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.4 0.8 1.2 1.6 2.4 2.8 Ω 3.4 SPP07N65C3 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed 0 4 8 12 16 20 24 28 nC 34 QGate V SPP07N65C3 VGS 0,8 VDS max DS maxV0,2

2004-04-07Rev. 1.0 Page 8 SPP07N65C3, SPI07N65C3 SPA07N65C3

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP07N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω 0 1 2 3 4 5 6 A 8 ID ns t td(off) tf td(on) tr 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A 0 20 40 60 80 100 Ω 130 RG 100 150 200 250 300 350 400 ns 500 t td(off) td(on) tf tr 16 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A 0 20 40 60 80 100 Ω 130 RG 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off)

2004-04-07Rev. 1.0 Page 9 SPP07N65C3, SPI07N65C3 SPA07N65C3 17 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A 0 20 40 60 80 Ω 120 RG V/ns 100 dv/dt dv/dt(on) dv/dt(off) 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω 0 1 2 3 4 5 6 A 8 ID 0.005 0.01 0.015 mWs 0.025 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 19 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=11A 0 20 40 60 80 100 Ω 130 RG 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 mWs 0.2 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.

20 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C

2004-04-07Rev. 1.0 Page 10 SPP07N65C3, SPI07N65C3 SPA07N65C3

21 Avalanche energy

EAS = f (Tj) par.: ID = 1.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS

23 Avalanche power losses

PAR = f (f ) parameter: EAR=0.5mJ 10 4 10 5 10 6 MHz f 100 200 300 W 500 PAR

22 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V 785 SPP07N65C3 V(BR)DSS 24 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss

2004-04-07Rev. 1.0 Page 11 SPP07N65C3, SPI07N65C3 SPA07N65C3 25 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 µJ 5.5 Eoss Definition of diodes switching characteristics

2004-04-07Rev. 1.0 Page 12 SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51

2004-04-07Rev. 1.0 Page 13 SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO-262-3-1 (I2-PAK) BA0.25 M Typical 2.54 3 x 0.75 ±0.1 1.05 1.27 B 9.25 ±0.2 0.05 Metal surface min. X = 7.25, Y = 6.9 C 11.6 ±0.3 10 ±0.2 C 2.4 0.5 ±0.1 ±0.24.55 13.5 ±0.5 All metal surfaces tin plated, except area of cut. ±0.31 8.51) 2 x 4.4 7.551) 0...0.15 0...0.3 2.4 A P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)

2004-04-07Rev. 1.0 Page 14 SPP07N65C3, SPI07N65C3 SPA07N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.