SPP04N60C3 INFINEON | Alldatasheet
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Technical content
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data Cool MOS Power Transistor VDS @ Tjma x 650 V RDS(on) 0.95 Ω ID 4.5 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
- P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 04N60C3 04N60C3 04N60C3 Type Package Ordering Code SPP04N60C3 P-TO220-3-1 Q67040-S4366 SPB04N60C3 P-TO263-3-2 Q67040-S4407 SPA04N60C3 P-TO220-3-31 Q67040-S4413 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 4.5 2.8 4.51) 2.81) A Pulsed drain current, tp limited by Tjma x ID puls 13.5 13.5 A Avalanche energy, single pulse ID=3.4, VDD =50V EAS 130 130 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD =50V EAR 0.4 0.4 Avalanche current, repetitive tAR limited by Tjma x IAR 4.5 4.5 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 50 31 W SPP_B Operating and storage temperature Tj , Tstg -55...+150 °C
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 2.5 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 4 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=4.5A - 700 - Gate threshold voltage VGS(th) ID=200µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, VGS =0V, Tj=25°C Tj=150°C 0.5 µA Gate-source leakage current IGSS V GS =30V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=2.8A Tj=25°C Tj=150°C 0.85 2.3 0.95 Ω Gate input resistance R G f=1MHz, open drain - 0.95 -
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=2.8A - 4.4 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 490 - pF Output capacitance C oss - 160 - Reverse transfer capacitanceC rss - 15 - Effective output capacitance,5) energy related Co(er) V GS =0V, V DS =0V to 480V - 20 - Effective output capacitance,6) time related Co(tr) - 35 - Turn-on delay time td(on) V DD =380V, V GS =0/10V, ID=4.5A, R G =18Ω - 6 - ns Rise time tr - 2.5 - Turn-off delay time td(off) - 58.5 80 Fall time tf - 9.5 14 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=4.5A - 2.2 - nC Gate to drain charge Q gd - 8.8 - Gate charge total Qg V DD =480V, ID=4.5A, V GS =0 to 10V - 19 25 Gate plateau voltage V(plateau) V DD =480V, ID=4.5A - 5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 4.5 A Inverse diode direct current, pulsed ISM - - 13.5 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =480V, IF=IS , diF/dt=100A/µs - 300 500 ns Reverse recovery charge Q rr - 2.6 - µC Peak reverse recovery currentIrrm - 18 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 900 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.039 0.039 K/W Cth1 0.00007347 0.00007347 Ws/K Rth2 0.074 0.074 Cth2 0.0002831 0.0002831 Rth3 0.132 0.132 Cth3 0.0004062 0.0004062 Rth4 0.555 0.272 Cth4 0.001215 0.001215 Rth5 0.529 0.559 Cth5 0.00276 0.005633 Rth6 0.169 2.523 Cth6 0.029 0.412 SPP_B SPP_B External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W SPP04N60C3 Ptot
2 Power dissipation FullPAK
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10ms DC
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 10V 6.5V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A 8.5 ID 4.5V 5.5V 20V 6.5V
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 6 7 A 9 ID Ω RDS(on) 4.5V 5.5V 20V 6.5V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 Ω 5.5 SPP04N60C3 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 0 4 8 12 16 20 24 nC 30 QGate V SPP04N60C3 VGS 0,8 VDS max DS maxV0,2
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP04N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =18Ω ID ns t td(off) tf td(on) tr 15 Typ. switching time t = f (RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=4.5 A 0 20 40 60 80 100 120 140 160 Ω 190 RG 100 150 200 250 300 350 400 ns 500 t td(off) tf td(on) tr 16 Typ. drain current slope di/dt = f(R G ), inductive load, Tj = 125°C par.: V DS =380V, VGS =0/+13V, ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 R G 400 800 1200 1600 A/µs 2400 di/dt di/dt(on) di/dt(off)
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data 17 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=4.5A 0 30 60 90 120 Ω 180 RG V/ns 100 dv/dt dv/dt(on) dv/dt(off) 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =18Ω ID 0.002 0.004 0.006 0.008 0.01 mWs 0.014 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 19 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 RG 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 mWs 0.1 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.
20 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 A IAR Tj(START)=25°C Tj(START)=125°C
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data
21 Avalanche energy
EAS = f (Tj) par.: ID = 3.4 , V DD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 mJ 160 EAS
23 Avalanche power losses
PAR = f (f ) parameter: E AR =0.4mJ 10 4 10 5 10 6 Hz f 100 125 150 W 200 PAR
22 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP04N60C3 V(BR)DSS 24 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data 25 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 µJ 3.5 Eoss Definition of diodes switching characteristics
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-263-3-2 (D2-PAK)
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)
SPP04N60C3, SPB04N60C3 SPA04N60C3Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.