SPA04N60C2 | DigiCamel IC Datasheet

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SPP04N60C2, SPB04N60C2 SPA04N60C2Final data Cool MOS™ Power Transistor Feature

New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances Product Summary 650 V RDS(on) 0.95 Ω ID 4.5 A VDS @ Tjmax P-TO220-3-31 P-TO220-3-1P-TO263-3-2 P-TO220-3-31 1 2 3 Marking 04N60C2 04N60C2 04N60C2 Type Package Ordering Code SPP04N60C2 P-TO220-3-1 Q67040-S4304 SPB04N60C2 P-TO263-3-2 Q67040-S4305 SPA04N60C2 P-TO220-3-31 Q67040-S4330 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 4.5 2.8 4.51) 2.81) A Pulsed drain current, tp limited by Tjmax ID puls 9 9 A Avalanche energy, single pulse ID=3.6A, VDD=50V EAS 130 130 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V EAR 0.4 0.4 Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 4.5 A Reverse diode dv/dt IS = 4.5 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 6 V/ns Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 50 31 W SPP_B Operating and storage temperature Tj , Tstg -55...+150 °C

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.5 K/W Thremal resistance, junction - case, FullPAK RthJC_FP - - 4 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Linear derating factor - - 0.4 W/K Linear derating factor, FullPAK - - 0.25 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 600 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=4.5A V(BR)DS - 700 - Gate threshold voltage, VGS = VDS ID=200µA, Tj=25°C VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS 0.5 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=2.8A, Tj=25°C RDS(on) - 0.85 0.95 Ω Gate input resistance f = 1 MHz, open drain RG - 0.95 -

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=2.8A - 2.5 S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 580 - pF Output capacitance Coss - 220 - Reverse transfer capacitance Crss - 7 - Effective output capacitance,4) energy related Co(er) VGS=0V, VDS=0V to 480V - 20 - Effective output capacitance,5) time related Co(tr) - 35 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=4.5A, RG=18Ω , Tj=125°C - 10 - ns Rise time tr - 31 - Turn-off delay time td(off) - 44 66 Fall time tf - 12.5 18.8 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=4.5A - 4.5 - nC Gate to drain charge Qgd - 11 - Gate charge total Qg VDD=350V, ID=4.5A, VGS=0 to 10V - 17.6 22.9 Gate plateau voltage V(plateau) VDD=350V, ID=4.5A - 8 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous forward current IS TC=25°C - - 4.5 A Inverse diode direct current, pulsed ISM - - 9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 900 1530 ns Reverse recovery charge Qrr - 3.2 - µC Peak reverse recovery current Irrm - 12 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 440 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.039 0.039 K/W Cth1 0.00008293 0.0000734 Ws/K Rth2 0.083 0.075 Cth2 0.000282 0.000282 Rth3 0.101 0.102 Cth3 0.0004859 0.000401 Rth4 0.262 0.27 Cth4 0.0006523 0.000736 Rth5 0.294 0.594 Cth5 0.005017 0.00501 Rth6 0.094 2.536 Cth6 0.052 0.412 SPP_BSPP_B External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W SPP04N60C2 Ptot

2 Power dissiaption FullPAK

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 9.5V 20V 12V 10V 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V 9.5V

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 6 7 A 8.5 ID 1.5 2.5 3.5 Ω RDS(on) 20V 12V 10V 8.5V 7.5V 6.5V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 Ω 5.5 SPP04N60C2 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25 °C 150 °C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 0 4 8 12 16 20 nC 26 QGate V SPP04N60C2 VGS 0,8 VDS max DS maxV0,2

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -2 10 -1 10 0 10 1 10 A SPP04N60C2 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=18Ω 0 1 2 3 4 5 6 7 8 A 10 ID 0 10 1 10 2 10 ns t td(on) tf td(off) tr 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=4.5 A 0 20 40 60 80 100 120 140 160 Ω 200 RG 0 10 1 10 2 10 3 10 ns t td(off) td(on) tftr 16 Typ. switching losses1) E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=18Ω 0 1 2 3 4 5 6 A 8 ID 0.02 0.04 0.06 0.08 mWs 0.12 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions.

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data 17 Typ. switching losses1) E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 RG 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 mWs 0.22 E *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. Eon* Eoff

18 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 A 4.5 IAR Tj(START)=125°C Tj(START)=25°C

19 Avalanche energy

EAS = f (Tj) par.: ID = 3.6 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 mJ 160 EAS

20 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP04N60C2 V(BR)DSS

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data

21 Avalanche power losses

PAR = f (f ) parameter: EAR=0.4mJ 10 4 10 5 10 6 Hz f 100 125 150 W 200 PAR 22 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 23 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 µJ 3.5 Eoss

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data Definition of diodes switching characteristics

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-263-3-1 (D2-PAK) MAX. BA0.25 M 0.1 Typical ±0.210 8.51) 7.551) (15) ±0.29.25 ±0.31 0...0.15 5.08 2.54 0.75±0.1 1.05 ±0.11.27 4.4 B 0.5 ±0.1 ±0.32.7 4.7±0.5 0.05 0.1 All metal surfaces: tin plated, except area of cut. 2.4 Metal surface min. x=7.25, y=6.9 A 0...0.3 B

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data P-TO-220-3-31 (FullPAK) 10.5±0.005 ±0.00512.79 14.1±0.005 ±0.00515.99 2.54 13.6±0.005 2.7 4.7 9.68 3.3 ±0.005 ±0.005 ±0.005 ±0.005 6.1±0.002 1.5±0.001 1.28-0.002 +0.003 -0.002 +0.0030.7 +0.005 -0.0020.5 2.57±0.002 ˚ 123 Please refer to mounting instructions (application note AN-TO220-3-31-01)

SPP04N60C2, SPB04N60C2 SPA04N60C2Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Product Information

SPA04N60C2 specifications and overview.

Summary

Cool MOS??Power Transistor 2002-08-12

Description

Cool MOS??Power Transistor 2002-08-12

Source title SPA04N60C2 Datasheet(PDF) - Infineon Technologies AG

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