SPA02N80C3_08 INFINEON | Alldatasheet

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Features

  • New revolutionary high voltage technology
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant
  • Ultra low gate charge
  • Ultra low effective capacitances
  • Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
  • Industrial application with high DC bulk voltage
  • Switching Application (i.e. active clamp forward) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current2) I D T C=25 °C A T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=1 A, V DD=50 V 90 mJ Avalanche energy, repetitive t AR 3),4) E AR I D=2 A, V DD=50 V Avalanche current, repetitive t AR 3),4) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0…640 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Mounting torque M2.5 screws 50 Ncm Value 1.2 ±30 30.5 -55 ... 150 0.05 ±20 V DS 800 V R DS(on)max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC Product Summary Type Package Marking SPA02N80C3 PG-TO220-3 02N80C3 Rev. 2.9 page 1 2008-10-15

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current3) I S,pulse 6 Reverse diode dv /dt 5) dv /dt 4 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 4.1 K/W R thJA leaded - - 80 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 800 - - V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=2 A - 870 - Gate threshold voltage V GS(th) V DS=V GS, I D=0.12 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 5 µA V DS=800 V, V GS=0 V, T j=150 °C - 25 - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=1.2 A, T j=25 °C - 2.4 2.7 Ω V GS=10 V, I D=12 A, T j=150 °C - 6.5 - Gate resistance R G f =1 MHz, open drain - 1.2 - Ω Values Thermal resistance, junction - ambient Value T C=25 °C Rev. 2.9 page 2 2008-10-15

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 290 - pF Output capacitance C oss - 13 - Effective output capacitance, energy related6) C o(er) - 11 - Effective output capacitance, time related7) C o(tr) - 26 - Turn-on delay time t d(on) - 25 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 72 - Fall time t f - 18 - Gate Charge Characteristics Gate to source charge Q gs - 1.5 - nC Gate to drain charge Q gd - 6 - Gate charge total Q g - 12 16 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=I S=2 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 520 - ns Reverse recovery charge Q rr - 2 - µC Peak reverse recovery current I rrm - 6 - A 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=2 A, R G=47 ? , T j=25°C V DD=640 V, I D=2 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 5) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. V R=400 V, I F=I S=2A, di F/dt =100 A/µs 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 1) J-STD20 and JESD22 Rev. 2.9 page 3 2008-10-15

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 °C; t p=10 µs parameter: D=t p/T parameter: V GS 0 25 50 75 100 125 150 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 msDC 10-2 10-1 100 101 1 10 100 1000 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 101 100 10-1 t p [s] Z thJC [K/W] 4.5 V 5 V 5.5 V 6 V 10 V 20 V 0 5 10 15 20 25 V DS [V] I D [A] limited by on-state resistance Rev. 2.9 page 4 2008-10-15

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C; t p=10 µs R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=1.2 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs parameter: T j typ 98 % 0.8 1.6 2.4 3.2 4.8 5.6 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [W] 25 °C 150 °C 0 2 4 6 8 10 V GS [V] I D [A] 6 V 10 V 20 V 4.5 V 5 V 5.5 V 0.5 1.5 2.5 0 5 10 15 20 25 V DS [V] I D [A] 4 V 4.5 V 5 V 5.5 V 6 V 10 V 20 V 5.4 5.8 6.2 6.6 7.4 7.8 8.2 8.6 0 1 2 3 4 5 6 I D [A] R DS(on) [W] Rev. 2.9 page 5 2008-10-15

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=2 A pulsed I F=f(V SD); t p=10 µs parameter: V DD parameter: T j

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=1 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 150°C (98%) 25°C (98°C) 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 160 V 640 V 0 2 4 6 8 10 12 Q gate [nC] V GS [V] 680 720 760 800 840 880 920 960 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 25 50 75 100 125 150 T j [°C] E AS [mJ] Rev. 2.9 page 6 2008-10-15

13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0.5 1.5 2.5 0 100 200 300 400 500 600 700 800 V DS [V] E oss [µJ] Ciss Coss Crss 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] Rev. 2.9 page 7 2008-10-15

Definition of diode switching characteristics Rev. 2.9 page 8 2008-10-15

PG-TO220-3 (fully isolated): Outline dimensions in mm/inches Rev. 2.9 page 9 2008-10-15

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© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 page 10 2008-10-15