SP8013 SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -20V -20A 11.2 @ VGS=-4.5V 7.9 @ VGS=-10V P-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Jun,13,2014 Details are subject to change without notice. SP8013 Green Product THERMAL CHARACTERISTICS 75Thermal Resistance, Junction-to-AmbientR JA °C/W Symbol VDS VGS IDM AID UnitsParameter -20 -20 -115 V V±20Gate-Source Voltage Drain-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed ac A TA=25°C WPD 1.67 -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG TA=70°C -16 A TA=70°C 1.07 W c

FEATURES

Super high dense cell design for low RDS(ON) . Rugged and reliable. Suface Mount Package. ESD Protected. Ver 1.0 D D D D G S S S TSON 3.3 x 3.3 Pi n 1

VGS=± 2 0 V,VDS=0V -20 ±10 -0.8 8.3 190 335 4000 1580 VDD=-10V ID=-1A VGS=-10V RGEN=6o h m VGS=-4.5V , ID=-8.4A VDS=-5V , ID=-10A VDS=-16V , VGS=0V VGS= 0 V,ID=-250uA -1.3 -1.8 11.2 Symbol Min Typ Max Units BVDSS V IGSS uA VGS(th) V gFS S tD(ON) ns tr ns tD(OFF) ns tf ns SWITCHING CHARACTERISTICS Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time mo h mRDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage ON CHARACTERISTICS b 82Qg nCTotal Gate Charge VDS=-10V,ID=-10A,VGS=-10V www.samhop.com.tw Jun,13,2014 nCQgs nCQgd Gate-Drain Charge Gate-Source Charge VDS=-10V,ID=-10A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=-1A -0.83VSD Diode Forward Voltage -1.2 V VDS=VGS ,I D=-250uA VDS=-10V,ID=-10A,VGS=-4.5V 38 nC 6.3VGS=-10V , ID=-10A 7.9 mo h m Ver 1.0 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 ,2 o z . _ _

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 11. Maximum Safe Operating Area

25 C75 C

Figure 9. Gate Charge Figure 10. switching characteristics

Ver 1.0 www.samhop.com.tw Jun,13,2014 PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance -°C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 1oz Single Pulse

www.samhop.com.tw Jun,13,2014 PACKAGE OUTLINE DIMENSIONS Ver 1.0 TSON 3.3 x 3.3 SYMBOLS MILLIMETERS A b C D E MIN. NOM. MAX. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e H L M 2.39 2.49

0.65 BSC

0.30 0.39 0.30 0.40 0.13 10o 2.59 0.50 0.50 12o D D1 e M C A E b L H PIN 1 0.15

Ver 1.0 www.samhop.com.tw Jun,13,2014 SP8013 TSON 3.3 x 3.3 Tape and Reel Data TSON 3.3 x 3.3 Tape TSON 3.3 x 3.3 Reel unit:р PACKAGE S mini 8 H1D D1 EE 1 E 2H PP 1 P2 T 3.70ӿ1.50 ӿ1.50 1.10 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 UNIT:р TAPE SIZE 12 р REEL SIZE A B C D N W1 W2 330 ²!1.0 1.5 FEEDING DIRECTION ²0.10(MIN) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 ²0.10 5.50 ²0.05 3.70 ²0.10 K 8.0 ²0.10 A N D B C 13 " + 0.5 - 0.2 ӿ13.0 + 0.5 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) P2 P1 E P D A A B B T K H SECTION A-A SECTION B-B

TSON 3.3 x 3.3 8013 XXXXXX Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal Code No. Pin 1 SP8013 www.samhop.com.tw Jun,13,2014 Ver 1.0