SP8010E SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 24V 26A 4.9 @ VGS=6V 4.3 @ VGS=10V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. Suface Mount Package. N-Channel Enhancement Mode Field Effect Transistor Ver 1.2 www.samhop.com.tw Mar,24,2014 Details are subject to change without notice. TSON 3.3 x 3.3 Pin 1 SP8010E Green Product Symbol VDS VGS IDM A PD °C-55 to 150 ID UnitsParameter V V±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous -Pulsed A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG 75 °C/WThermal Resistance, Junction-to-AmbientR JA TA=25°C W1.67 c D D D D G S S S ESD Protected. ac a 7.0 @ VGS=4V

V IGSS ±10 uA VGS(th) V 4.3 Qg 118 nC 304 1390 970 tD(ON) ns tr ns tD(OFF) ns tf ns SWITCHING CHARACTERISTICS VDD=12V ID=13A VGS=10V RGEN= 4.7 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohm VGS=10V , ID=13A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=0.3mA VDS=24V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=-12V , ID=10mA ON CHARACTERISTICS VGS=6V , ID=13A 5.4 4.9 6.6 m ohm b SP8010E Ver 1.2 www.samhop.com.tw Mar,24,2014 VSD nCQgs nCQgd 6.7 5.6Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=20V,ID=26A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=26A 0.85 1.3 V Notes VDS=20V,ID=26A,VGS=10V 1.0 1.4 2.0 VGS=0V , ID=10mA V BVDSX 10 a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. VGS=4V , ID=13A 7.0 9.5 m ohm

Ver 1.2 www.samhop.com.tw Mar,24,2014 Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VDS Gate-Source Voltage VGS (V) Drain-source on-resistance RDS(ON) (mΩ) VGS=2. 4V 0 1 2 3 4 5 -55 C Tj=100 C 25 C 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 I D = 26 A 13 A 11 0 100 100 0.1 V G S =6V V G S = 10V Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VDS Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VGS VDS - VGS Gate-Source Voltage VGS (V) Drain Current ID (A) RDS(ON) - ID 33.1 3.2 3.34.0 3.510 VGS=2.5V 3.33.43.5 4.5 2.9 3.2 3.7 -80 8040-40 0 120 160 Ambient temperature Ta (°C ) RDS(on) (m Ω) VGS=10V VGS=6V Drain-source ON resistance RDS(ON) - Ta ID = 6.5, 13, 26A 6. 5A 4.0 3.0 2.5 2.8 2.7 2.6 3.1 2.9 2.8 2.7 2.6 V G S = 4V ID = 6.5, 13, 26A VGS=4V ID = 6.5, 13, 26A

Ver 1.2 www.samhop.com.tw Mar,24,2014 Drain power dissipation PD (W) 2.5 2.0 1.5 1.0 0.5 0 40 80 120 160 Drain-source voltage VDS (V) 100 0.1

1 VGS=0V1

4.510 Drain reverse current IDR (A) IDR VDS Ambient temperature Ta (°C ) PD Ta Gate threshold voltage Vth (V) Ambient temperature Ta (°C ) -80 8040-40 0 2.5 2.0 1.5 1.0 0.5 120 160 Vth Ta VDS=VGS ID=0.3mA Drain-source voltage VDS (V) Total gate charge Qg (nC) 0 048 12 16 20 24 28 32 Gate-source voltage VGS (V) Dynamic input/output characteristics ID=26A VDD=20V VDD=20V 10 5

Ver 1.2 www.samhop.com.tw Mar,24,2014 Safe operating area 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board Single Pulse Pulse width tw (S) rth - tw Transient thermal impedance rth (°C/W) 0.1 1 10 100 RDS(ON) L imit 0.1 VGS=10V Single Pulse TA=25 C DC t=1ms t=100us t=10ms t=1s Drain current ID (A) Drain-source voltage VDS (V) 100

www.samhop.com.tw Mar,24,2014 PACKAGE OUTLINE DIMENSIONS Ver 1.2 TSON 3.3 x 3.3 SYMBOLS MILLIMETERS A b C D E MIN. NOM. MAX. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e H L M 2.39 2.49

0.65 BSC

0.30 0.39 0.30 0.40 0.13 10o 2.59 0.50 0.50 12o D D1 e M C A E b L H PIN 1 0.15

Ver 1.2 www.samhop.com.tw Mar,24,2014 SP8010E TSON 3.3 x 3.3 Tape and Reel Data TSON 3.3 x 3.3 Tape TSON 3.3 x 3.3 Reel unit:mm PACKAGE TSON 3.3 x 3.3 H1D D1 EE 1 E 2H PP 1 P2 T 3.70ӿ1.50 ӿ1.50 1.10 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 UNIT:р TAPE SIZE 12 р REEL SIZE A B C D N W1 W2 330 ²!1.0 1.5 FEEDING DIRECTION ²0.10(MIN) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 ²0.10 5.50 ²0.05 3.70 ²0.10 K 8.0 ²0.10 A N D B C 13 " + 0.5 - 0.2 ӿ13.0 + 0.5 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) P2 P1 E P D A A B B T K H SECTION A-A SECTION B-B

TSON 3.3 x 3.3 8010E XXXXXX Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal Code No. Pin 1 SP8010E www.samhop.com.tw Mar,24,2014 Ver 1.2