SP8009 SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 24A 7.2 @ VGS=6V 6.0 @ VGS=10V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. Suface Mount Package. N-Channel Enhancement Mode Field Effect Transistor Ver 1.1 www.samhop.com.tw Jul,18,2013 Details are subject to change without notice. TSON 3.3 x 3.3 Pin 1 SP8009 Green Product Symbol VDS VGS IDM A PD °C-55 to 150 ID UnitsParameter V V±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous -Pulsed A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG 75 °C/WThermal Resistance, Junction-to-AmbientR JA TA=25°C W1.67 a

V IGSS ±100 nA VGS(th) V CISS 1670 pF COSS 382 pF CRSS 333 pF Qg nC tD(ON) ns tr ns tD(OFF) ns tf ns VDS=10V,VGS=0V SWITCHING CHARACTERISTICS VDD=15V ID=12A VGS=10V RGEN= 4.7 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohm VGS=10V , ID=12A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=0.2mA VDS=30V , VGS=0V VGS= ±16V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=-20V , ID=10mA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=6V , ID=12A 7.2 7.2 11 m ohm b f=1.0MHz b SP8009 Ver 1.1 www.samhop.com.tw Jul,18,2013 VSD nCQgs nCQgd 2.5 10Gate-Drain Charge Gate-Source Charge Diode Forward Voltage VDS=24V,ID=12A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=24A 0.86 1.3 V Notes VDS=24V,ID=12A,VGS=10V a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing. _ _ 11 . 5 3 VGS=0V , ID=10mA V BVDSX 10

Ver 1.1 www.samhop.com.tw Jul,18,2013 Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VDS Gate-Source Voltage VGS (V) Drain-source on-resistance RDS(ON) (mΩ) VGS=2.5 V 0 1 2 3 4 5 -55 C Tj=100 C 25 C 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 I D =24 A 12 A 11 0 100 100 0.1 V G S =6V V G S =10V Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VDS Drain Current ID (A) Drain-Source Voltage VDS (V) ID - VGS VDS - VGS Gate-Source Voltage VGS (V) Drain Current ID (A) RDS(ON) - ID 2.8 2.9 3.0 3.1 3.2 3.4 2.7 -80 8040-40 0 120 160 Ambient temperature Ta (°C ) RDS(on) (m Ω) ID = 6, 12, 24A VGS=10V VGS=6V Drain-source ON resistance RDS(ON) - Ta 3.3 3.6 4.5 2.6 VGS=2.5 V 2.9 3.0 3.1 3.2 3.4 2.7 3.3 3.5 3.7 3.6 4.0 5.0 ID = 6, 12, 24A

Ver 1.1 www.samhop.com.tw Jul.18,2013 Drain-source voltage VDS (V) Total gate charge Qg (nC) 0 048 12 16 20 24 28 32 Gate threshold voltage Vth (V) Ambient temperature Ta (°C ) Drain power dissipation PD (W) 2.5 2.0 1.5 1.0 0.5 0 40 80 120 160 -80 8040-40 0 2.5 2.0 1.5 1.0 0.5 120 160 Drain-source voltage VDS (V) 100 0.1 Drain reverse current IDR (A) IDR VDS 1000 100 Capacitance C (pF) Drain-source voltage VDS (V) 11 0 1000.1 10000 Crss Ciss Coss Capacitance VDS Vth Ta Ambient temperature Ta (°C ) Gate-source voltage VGS (V) PD Ta Dynamic input/output characteristics VDS=VGS ID=0.2mA ID=24A VDD=24V VDD=24V 12 6 -1.2 VGS=0V1 4.510

Ver 1.1 www.samhop.com.tw Jul,18,2013 Safe operating area 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board Single Pulse Pulse width tw (S) rth - tw Transient thermal impedance rth (°C/W) 0.1 1 10 100 RDS(ON) L imit 0.1 VGS=10V Single Pulse TA=25 C DC t=1ms t=100us t=10ms t=1s Drain current ID (A) Drain-source voltage VDS (V)

www.samhop.com.tw Jul,18,2013 PACKAGE OUTLINE DIMENSIONS Ver 1.1 TSON 3.3 x 3.3 SYMBOLS MILLIMETERS A b C D E MIN. NOM. MAX. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e H L M 2.39 2.49

0.65 BSC

0.30 0.39 0.30 0.40 0.13 10o 2.59 0.50 0.50 12o D D1 e M C A E b L H PIN 1 0.15