SP8005

SP8005 SAMHOP | Alldatasheet

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Suface Mount Package. S mHop Microelectronics C orp.a SP8005 Symbol VDS VGS IDM W A PD 1.67 -55 to 150 ID UnitsParameter °C/W V V±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 20V 32A 3.7 @ VGS=4.0V 3.5 @ VGS=4.5V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Sep,13,2013 Details are subject to change without notice. a TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. 25.6 1.07 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V 3.9 @ VGS=3.7V N-Channel Enhancement Mode Field Effect Transistor TSON 3.3 x 3.3 Pin 1 D D D D G S S S Ver 2.0 d

IGSS ±10 uA VGS(th) 0.5 V m ohm VGS=4.5V , ID=16A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=1.0mA VDS=16V , VGS=0V VGS= ±12V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS SP8005 1.1 1.5 gFS 56 S CISS 2550 pF COSS 528 pF CRSS 470 pF Qg nC 174 nCQgs 138 nCQgd tD(ON) ns tr 5.1 ns tD(OFF) 13.7 ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=16V ID=16A VGS=4.5V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=5V , ID=16A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=4.0V , ID=16A m ohm c f=1.0MHz c VDS=16V,ID=32A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=32A 0.85 1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum juncting temperature. _ _ www.samhop.com.tw Sep,13,2013 2.8 3.5 3.0 3.7 VGS=3.7V , ID=16A m ohm VGS=2.5V , ID=16A m ohm 3.5 5.0 2.3 2.5 3.0 VGS=3.1V , ID=16A m ohm 3.3 4.32.8 3.1 3.92.6 Ver 2.0

www.samhop.com.tw Sep,13,2013 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=4.5V Single Pulse TA=25 C 0.01 FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms DC VDS - Drain to Source Voltage - V ID - Drain Current - A 100ms TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - °C/W 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 2oz Single Pulse RDS(ON) Limit Ver 2.0

www.samhop.com.tw Sep,13,2013 10.80.60.40.2 VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 4.5 V 0.01 0.1 100 2.521.510.5 VGS - Gate to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 25°C 75°C TA = -25°C -50 0.7 1.3 1.1 0.9 150100500 Tch - Channel Temperature - °C VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID = 1.0mA 0.01 0.01 0.1 100 1001010.1 ID - Drain Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TA = -25°C 25°C 75°C 125°C 1001010.1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 2.5 V 3.1 V 4.0 V 4.5 V 8642 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 16 A 1210 3.7 V 100 80 4.0 V 3.1 V 3.7 V 2.5 V 0.5 Ver 2.0 1000 125°C

www.samhop.com.tw Sep,13,2013 QG - Gate Charge -nC VGS - Gate to Drain Voltage - V 0.01 0.1 100 0.90.60.30 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 16 A VGS = 2.5 V 3.1 V 4.0 V 4.5 V 2418126 1.81.51.2 VGS = 0 V 3.7 V VDD = 4 V 10 V 16 V ID = 32 A Ver 2.0 1000 0.1 100 101 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS td(on) td(off) tr tf VDD = 16.0 V VGS = 4.5 V RG = 6 Ω 0.1 100 1000 100101 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Coss Crss Ciss

www.samhop.com.tw Sep,13,2013 PACKAGE OUTLINE DIMENSIONS Ver 2.0 TSON 3.3 x 3.3 SYMBOLS MILLIMETERS A b C D E MIN. NOM. MAX. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e H L M 2.39 2.49

0.65 BSC

0.30 0.39 0.30 0.40 0.13 10o 2.59 0.50 0.50 12o D D1 e M C A E b L H PIN 1 0.15

Ver 2.0 www.samhop.com.tw Sep,13,2013 SP8005 TSON 3.3 x 3.3 Tape and Reel Data TSON 3.3 x 3.3 Tape TSON 3.3 x 3.3 Reel unit:р PACKAGE S mini 8 H1D D1 EE 1 E 2H PP 1 P2 T 3.70ӿ1.50 ӿ1.50 1.10 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 UNIT:р TAPE SIZE 12 р REEL SIZE A B C D N W1 W2 330 ²!1.0 1.5 FEEDING DIRECTION ²0.10(MIN) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 ²0.10 5.50 ²0.05 3.70 ²0.10 K 8.0 ²0.10 A N D B C 13 " + 0.5 - 0.2 ӿ13.0 + 0.5 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) P2 P1 E P D A A B B T K H SECTION A-A SECTION B-B

TSON 3.3 x 3.3 8005 XXXXXX Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal Code No. Pin 1 SP8005 www.samhop.com.tw Sep,13,2013 Ver 2.0