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Suface Mount Package. S mHop Microelectronics C orp.a SP605C Symbol VDS VGS IDM 1.5 W A PD 1089 -55 to 150 ID UnitsParameter 100 203 °C/W V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 60V 100A 3.8 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted ) Limit Drain Current-Continuous -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-CaseR JC www.samhop.com.tw Dec,09,2015 Details are subject to change without notice. TC=25°C TC=70°C A TC=70°C W Green Product EAS Single Pulse Avalanche Energy d mJ 4321 8 7 6 5 N-Channel Logic Level Enhancement Mode Field Effect Transistor c Ver 1.0 DFN 5x6 PIN1
IGSS ±100 nA VGS(th) V 3.0 gFS S CISS 3678 pF COSS 760 pF CRSS 514 pF Qg 105 nC 183 115 tD(ON) ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=30V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohm VGS=10V , ID=25A VDS=10V , ID=25A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (Tc=25 °C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 3.8 b f=1.0MHz b SP605C www.samhop.com.tw Dec,09,2015 nCQgs nCQgd 28.5Gate-Drain Charge Gate-Source Charge VDS=30V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VDS=30V,ID=25A,VGS=10V VSD Diode Forward Voltage VGS=0V,IS=16A 0.75 1.3 V 2 3 4 Ver 1.0 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. _ _
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area
25 C75 C
www.samhop.com.tw Dec,09,2015 PACKAGE OUTLINE DIMENSIONS Ver 1.0 TOP VIEW DFN 5x6-8L BOTTOM VIEW SIDE VIEW SYMBOLS MILLIMETERS A b c D E MIN MAX 0.85 1.00 0.00 0.05 0.30 0.50 0.15 0.25 e L
3.62 BSC
0.45 0.00 NOM 0.95 0.40 0.20
1.27 BSC
0.15 0 10o
5.20 BSC
4.35 BSC
5.55 BSC
6.05 BSC
0.55 0.65
0.68 REF
E D e L2 L b A A1 C
Production Month (1,2 ~ 9, A,B,C) Ver 1.0 Dec,09,2015 TOP MARKING DEFINITION SMC internal code No. (A,B,C...Z) XXXXXX www.samhop.com.tw SamHop Logo Product No.