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S mHop Microelectronics C orp.a Symbol VDS VGS IDM 1.5 W A PD -55 to 150 ID UnitsParameter 100 V V±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) Limit Drain Current-Continuous c TC=25°C -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-CaseR JC www.samhop.com.tw Dec,08,2016 Details are subject to change without notice. A38.4TC=70°C TC=70°C 53 W SP4510DG Ver 1.0 Green Product EAS Single Pulse Avalanche Energy d mJ132 Suface Mount Package. PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 48A 19 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. 4321 8 7 6 5 DFN 5x6 PIN1
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 2.5 V gFS 45 S VSD CISS 1460 pF COSS 570 pF CRSS 65 pF Qg nC nCQgs nCQgd tD(ON) ns tr 8.4 ns tD(OFF) 7.8 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 2.5 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=50V,ID=24A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=24A VDS=10V , ID=24A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage V DS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 4.5 b f=1.0MHz b VDS=50V,ID=24A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=8A 1.3 V www.samhop.com.tw2 Dec,08,2016 SP4510DG Ver 1.0 3.5 0.82 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. _ _
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain Figure 6. Body Diode Forward Voltage Figure 5. On-Resistance vs.
25 C25 C
www.samhop.com.tw Dec,08,2016 PACKAGE OUTLINE DIMENSIONS Ver 1.0 TOP VIEW DFN 5x6-8L BOTTOM VIEW SIDE VIEW SYMBOLS MILLIMETERS A b c D E MIN MAX 0.85 1.00 0.00 0.05 0.30 0.50 0.15 0.25 e L
3.62 BSC
0.45 0.00 NOM 0.95 0.40 0.20
1.27 BSC
0.15 0 10o
5.20 BSC
4.35 BSC
5.55 BSC
6.05 BSC
0.55 0.65
0.68 REF
E D e L2 L b A A1 C
Production Month (1,2 ~ 9, A,B,C) Ver 1.0 Dec,08,2016 TOP MARKING DEFINITION SMC internal code No. (A,B,C...Z) XXXXXX www.samhop.com.tw SamHop Logo Product No.