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Suface Mount Package. S mHop Microelectronics C orp.a SP4412 Symbol VDS VGS IDM W A PD 1.67 -55 to 150 ID UnitsParameter °C/W V V±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 30V 16A 31 @ VGS=4.5V 19 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed c A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Apr,16,2014 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. 5.6 1.07 N-Channel Enhancement Mode Field Effect Transistor TSON 3.3 x 3.3 Pin 1 D D D D G S S S Ver 1.1 c 56EAS Single Pulse Avalanche Energy d mJ 16TC=25°C TC=100°C A12.5 A 4.8 °C/WThermal Resistance, Junction-to-CaseR JC
IGSS ±10 uA VGS(th) 1 V m ohm VGS=10V , ID=3.5A RDS(ON) Drain-Source On-State Resistance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=24V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA ON CHARACTERISTICS SP4412 1.8 2.5 gFS 14 S CISS 500 pF COSS 120 pF CRSS 73 pF Qg nC 12.5 nCQgs nCQgd tD(ON) ns tr 1.2 ns tD(OFF) 1.8 ns tf ns Gate-Drain Charge VDS=10V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=15V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VDS=5V , ID=3.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance Reverse Transfer Capacitance VGS=4.5V , ID=2.8A m ohm b f=1.0MHz b VDS=15V,ID=3.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.75 1.2 V Notes www.samhop.com.tw Apr,16,2014 15 19 23 31 Ver 1.1 VDS=15V,ID=3.5A,VGS=10V VDS=15V,ID=3.5A,VGS=4.5V 3.8 a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) nC
Ver 1.1 www.samhop.com.tw Apr,16,2014 tp V(BR ) DSS IAS F igure 13b. ofr mWave sUnc lamped Inductive F igure 13a. Unc lamped sInductive Te t Circuit R G IAS 0.01tp D.U. T L V DS - DD 20V V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - °C/W 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 Mounted on FR-4 board of 1 inch , 1oz Single Pulse
www.samhop.com.tw Apr,16,2014 PACKAGE OUTLINE DIMENSIONS Ver 1.1 TSON 3.3 x 3.3 SYMBOLS MILLIMETERS A b C D E MIN. NOM. MAX. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e H L M 2.39 2.49
0.65 BSC
0.30 0.39 0.30 0.40 0.13 10o 2.59 0.50 0.50 12o D D1 e M C A E b L H PIN 1 0.15
Ver 1.1 www.samhop.com.tw Apr,16,2014 SP4412 TSON 3.3 x 3.3 Tape and Reel Data TSON 3.3 x 3.3 Tape TSON 3.3 x 3.3 Reel unit:р PACKAGE S mini 8 H1D D1 EE 1 E 2H PP 1 P2 T 3.70ӿ1.50 ӿ1.50 1.10 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 UNIT:р TAPE SIZE 12 р REEL SIZE A B C D N W1 W2 330 ²!1.0 1.5 FEEDING DIRECTION ²0.10(MIN) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 ²0.10 5.50 ²0.05 3.70 ²0.10 K 8.0 ²0.10 A N D B C 13 " + 0.5 - 0.2 ӿ13.0 + 0.5 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) P2 P1 E P D A A B B T K H SECTION A-A SECTION B-B
TSON 3.3 x 3.3 4412 XXXXXX Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal Code No. Pin 1 SP4412 www.samhop.com.tw Apr,16,2014 Ver 1.1