SP3900 SAMHOP | Alldatasheet
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Suface Mount Package. S mHop Microelectronics C orp.a SP3900 Symbol VDS VGS IDM W A PD -55 to 150 ID UnitsParameter 4.5 °C/W V V±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 30V 4.5A 74 @ VGS=4.5V 42 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature RangeTJ, TSTG Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Jan,23,2014 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product 3.6 0.94 EAS Single Pulse Avalanche Energy d mJ 1.47 S1 G1 S2 G2 D1 D1 D2 D2 Ver 1.1 DFN 3x3 PIN1
IGSS ±100 nA VGS(th) V gFS S CISS 380 pF COSS 63 pF CRSS 46 pF Qg nC 4.6 tD(ON) ns tr ns tD(OFF) ns tf ns VDS=10V,VGS=0V SWITCHING CHARACTERISTICS VDD=15V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohm VGS=10V , ID=2.25A VDS=10V , ID=2.25A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=24V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=1.7A 55 74 m ohm c f=1.0MHz c SP3900 www.samhop.com.tw Jan,23,2014 nCQgs nCQgd 1.2 1.7Gate-Drain Charge Gate-Source Charge VDS=15V,ID=2.25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS nC3.2 VDS=15V,ID=2.25A,VGS=10V VDS=15V,ID=2.25,VGS=4.5V VSD Diode Forward Voltage VGS=0V,IS=1A 0.8 1.2 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting T J=25°C,L=0.5mH,VDD = 20V.(See Figure13) _ _ 1 2.1 3 Ver 1.1
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area
75 C 25 C
Ver 1.1 www.samhop.com.tw Jan,23,2014 tp V(BR ) DSS IAS F igure 13b. ofr mWave sUnc lamped Inductive F igure 13a. Unc lamped sInductive Te t Circuit R G IAS 0.01tp D.U. T L V DS - DD 20V V 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance P DM 1. R ɞJA (t )=r (t ) * RɞJA 2. R ɞJA =S ee Dat asheet 3. T JM -T A = P DM* R ɞJA (t ) 4. Dut y Cycle, D=t 1/t2 0.01 0.02 0.5 0.2 0.1 0.05 Single Pulse 0.001
www.samhop.com.tw Jan,23,2014 PACKAGE OUTLINE DIMENSIONS Ver 1.1 TOP VIEW DFN 3x3-8L BOTTOM VIEW SIDE VIEW SYMBOLS MILLIMETERS A b c D E MIN MAX 0.70 0.90 0.00 0.05 0.24 0.35 0.10 0.25 e L
3.00 BSC
0.30 NOM 0.80 0.30 0.152
1.813 BSC
0.50 0 10o E D e A A1 c
2.475 BSC
0.225 BSC
3.20 BSC
L b
1.063 BSC
0.65 BSC
0.40 0.00 0.100 12o E3 0.525 BSC
www.samhop.com.tw Jan,23,2014 TOP MARKING DEFINITION DFN 3x3 Pin 1 Ver 1.1 3900 XXXXXX Product No. SamHop Logo Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) SMC internal code No. (A,B...Z)