SP1255 LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

  • Protection for the VBUS circuit on USB2.0 Fast Charging Pinout Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP1255 Series 160A for VBUS RoHS Pb GREEN GND GND Bottom View AEC-Q101 qualified Surge Protection - SP1255 Series
  • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
  • EFT , IEC 61000-4-4, 80A (tP=5/50ns)
  • Surge, IEC 61000-4-5 2nd edition, 160A (tP=8/20μs)
  • Protection for VBUS operating up to 13.5V
  • Benchmark setting protection
  • High current handling capability for fast charging

applications

  • Halogen free, Lead free and RoHS compliant

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 07/27/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series SP1255P Series SP3012 CAUTION: Stresses at or above those listed in “ Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also due to variations in test equipment stresses shown above are averages. Absolute Maximum Ratings Symbol Parameter Value Units IPP (Pin 1) Peak Current (tp=8/20μs) 160 A TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units USB VBUS (Pin 1) Reverse Standoff Voltage VRWM Pin 1 to GND 13.5 V Reverse Breakdown Voltage VBR IT=1mA, Pin 1 to GND 14.5 16.5 V Reverse Leakage Current ILEAK VR=13.5V , Pin 1 to GND 0.05 1 µA Forward Voltage VF IF=10mA, GND to Pin 1 0.6 0.7 1. 0 V Clamp Voltage1 VC IPP=30A, tp=8/20µs, Fwd 16.5 18 V IPP=100A, tp=8/20µs, Fwd 19.5 25 V IPP=135A, tp=8/20µs, Fwd 25.5 V IPP=160A, tp=8/20µs, Fwd 28.0 V ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact) ±30 kV IEC 61000-4-2 (Air) ±30 kV Diode Capacitance1 CD Reverse Bias=0V , f=1MHz 1300 2500 pF Note: 1 Parameter is guaranteed by design and/or device characterization. 100 200 300 400 500 600 700 800 900 1000 1100 0 123456789 10 11 12 Capacitance (pF) Bias Voltage (V) Capacitance vs. Reverse Bias (Pin1 to GND) Surge Protection - SP1255 Series 0.1 100 0.11 10 1001 000 Pe ak Pulse Power -Ppp (kW) Pu lse Duration tp(µs) Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin1 to GND) 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 Clamp Voltage (VC ) Peak Pulse Current -I PP (A) Clamping Voltage vs. Peak Pulse Current (Pin1 to GND)

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 07/27/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series SP1255P Series Surge Protection - SP1255 Series Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Numbering System SP 1255 01 U T G Series Number of Channels Package T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes) U=/uni03BCDFN-6 Part Marking System A H Product Series = SP1255 Assembly Site A Number of Channels

Ordering Information

Part Number Package Marking Min. Order Qty. Packaging Option P0/P1 Packaging Specification SP1255-01UTG µDFN-6 H1 3000 Tape & Reel – 8mm tape/7” reel 4mm/4mm EIA RS-481A

©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 07/27/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series SP1255P Series Package Dimensions — µDFN-6 (1.8x2.0x0.55mm) µDFN6 (1 .8x2.0x0.55mm) JEDEC MO-229 Symbol Millimeters Inches Min Nom Max Min Nom Max A1 0.00 - 0.05 0.000 - 0.002 A3 0.15 Ref 0.006 Ref e 0.40 BSC 0.016 BSC e1 0.80 BSC 0.031 BSC B 0.80 BSC 0.031 BSC Top View Bottom View Side View Recommended Soldering Footprint G F Y P B C N J X Z Notes: 1 . Dimension and tolerancing comform to ASME Y14.5M-1994. 2. Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact. Embossed Carrier T ape & Reel Specification — µDFN-6 Symbol Millimeters A0 1 .95 +/- 0.05 B0 2.30 +/- 0.05 D0 1 .50 + 0.10 D1 Ø 0.60 + 0.05 E 1 .75 +/- 0.10 F 3.50 +/- 0.05 K0 0.75 +/- 0.05 P0 4.00 +/- 0.10 P1 4.00 +/- 0.10 P2 2.00+/-0.05 T 0.25 +/- 0.02 P2 D0 E F W T B0K0 22.12ø13.22 ø179.90 ø155.37 ø70.55 ø15.57 ø58.11 24.32 1.461.11 9.04 Pin1 Location Surge Protection - SP1255 Series