SP0610L SIEMENS | Alldatasheet
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Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 123 SP 0610 L Q67000-S065 bulk D G S SP0610L TO-92 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS - 60 V Drain-gate voltage,RGS = 20 kW VDGR - 60 Gate-source voltage VGS – 20 Continuous drain current,TA = 25 ˚C ID - 0.18 A Pulsed drain current, TA = 25 ˚C ID puls - 0.72 Max. power dissipation,TA = 25 ˚C Ptot 0.63 W Operating and storage temperature range Tj,Tstg - 55 … + 150 ˚C Thermal resistance, chip-ambient (without heat sink) RthJA RthJSR £ 200 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 SIPMOS â Small-Signal Transistor SP 0610L l VDS - 60 V l ID - 0.18 A l RDS(on) 10 W l P channel l Enhancement mode
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0,ID = 0.25 mA V(BR)DSS - 60 – – V Gate threshold voltage VGS =VDS ,ID = 1 mA VGS(th) - 1.0 - 1.5 - 2.0 Zero gate voltage drain current VDS = - 60 V,VGS = 0 Tj = 25 ˚C IDSS – - 0.1 - 1 mA Gate-source leakage current VGS =- 20 V,VDS = 0 IGSS – - 1 - 10 nA Drain-source on-resistance VGS =- 10 V,ID =- 0.5 A RDS(on) –71 0 W Dynamic Characteristics Forward transconductance VDS ‡ 2· ID · RDS(on)max,ID =- 0.5 A gfs 0.08 0.13 – S Input capacitance VGS = 0,VDS =- 25 V, f= 1 MHz C i iss –3 0 4 0 pF Output capacitance VGS = 0,VDS =- 25 V,f = 1 MHz Coss –1 7 2 5 Reverse transfer capacitance VGS = 0,VDS =- 25 V, f= 1 MHz Crss –81 2 Turn-on timeton, (ton =td(on) +tr) VDD =- 30 V,VGS = -10 V,RGS =5 0W , ID =- 0.27 A td(on) – 7 10 ns tr –1 2 1 8 Turn-off timetoff, (toff= td(off) +tf) VDD =- 30 V,VGS =-10 V,RGS =5 0W , ID =- 0.27 A td(off) –1 0 1 3 tf –2 0 2 7
Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS –– - 0.18 A Pulsed reverse drain current TA = 25 ˚C ISM –– - 0.72 Diode forward on-voltage IF =- 0.18 A,VGS = 0 VSD – - 0.85 - 1.2 V TO-92 Dimensions in mm SP 0610L
atTj = 25 ˚C, unless otherwise specified. Total power dissipationPtot =f (TA) Typ. output characteristicsID =f (VDS ) parameter:tp = 80ms Safe operating areaID =f(VDS ) parameter:D = 0.01,TC = 25 ˚C Typ. drain-source on-resistance RDS(on) =f (ID ) parameter:VGS SP 0610L
Typ. transfer characteristicsID =f(VGS ) parameter:tp = 80ms, VDS ‡ 2· ID · RDS(on)max. Drain-source on-resistance RDS(on) =f( Tj) parameter:ID = 0.5 A,VGS = 10 V, (spread) Typ. forward transconductance gfs= f (ID ) parameter:VDS ‡ 2· ID · RDS(on)max.,tp = 80 ms Typ. capacitancesC =f (VDS ) parameter:VGS = 0,f = 1 MHz SP 0610L
Gate threshold voltageVGS(th) =f (Tj) parameter:VDS =VGS ,ID = 1 mA, (spread) Drain currentID =f (TA) parameter:VGS ‡ 10 V SP 0610L Forward characteristics of reverse diode IF =f(VSD ) parameter:tp = 80ms,Tj,(spread) Drain-source breakdown voltage V(BR) DSS =b · V(BR)DSS (25 ˚C)